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Atomic layer deposition of Y2O3 films using heteroleptic liquid (iPrCp)(2)Y(iPr-amd) precursor Go to Link

Park, In-Sung; Jung, Yong Chan; Seong, Sejong; Ahn, Jinho; Kang, Jiehun; Noh, Wontae; Lansalot-Matras, Clement

ArticleIssue Date2014CitationJournal of Materials Chemistry C, v.2, no.43, pp 9240 - 9247PublisherRoyal Society of Chemistry

SCIESCOPUS

Effects of hydrogen annealing temperature on the resistive switching characteristics of HfOx thin films Go to Link

Jung, Yong Chan; Seong, Sejong; Lee, Taehoon; Kim, Seon Yong; Park, In-Sung; Ahn, Jinho

ArticleIssue Date2018CitationMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, v.88, pp.207 - 213PublisherELSEVIER SCI LTD

SCOPUS

Electrode dependent interfacial layer variation in metal-oxide- semiconductor capacitor Go to Link

Park, In-sung; Jung, Yong Chan; Lee, Min-joon; Seong, Sejong; Ahn, Jinho

ArticleIssue Date2014CitationIOP Conference Series : Materials Science and Engineering, v.54, no.1, pp 1 - 6PublisherIOP Publishing

SCIESCOPUS

Enhanced uniformity in electrical and optical properties of ITO thin films using a wide thermal annealing system Go to Link

Seong, Sejong; Jung, Yong Chan; Lee, Taehoon; Park, In-Sung; Ahn, Jinho

ArticleIssue Date2018CitationMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, v.79, pp.14 - 19PublisherELSEVIER SCI LTD

SCISCIESCOPUSKCI

Fabrication of Fe3O4-ZnO core-shell nanoparticles by rotational atomic layer deposition and their multi-functional properties Go to Link

Seong, Sejong; Jung, Yong Chan; Lee, Taehoon; Park, In-Sung; Ahn, Jinho

ArticleIssue Date2016CitationCurrent Applied Physics, v.16, no.12, pp 1564 - 1570PublisherThe Korean Physical Society

SCISCIESCOPUS

GeOx interfacial layer scavenging remotely induced by metal electrode in metal/HfO₂/GeOx/Ge capacitors Go to Link

Lee, Taehoon; Jung, Yong Chan; Seong, Sejong; Lee, Sung Bo; Park, In-Sung; Ahn, Jinho

ArticleIssue Date2016CitationApplied Physics Letters, v.109, no.2PublisherAmerican Institute of Physics

SCISCIESCOPUS

Improved resistive switching characteristics of a Pt/HfO2/Pt resistor by controlling anode interface with forming and switching polarity Go to Link

Jung, Yong Chan; Seong, Sejong; Lee, Taehoon; Kim, Seon Yong; Park, In-Sung; Ahn, Jinho

ArticleIssue Date2018CitationApplied Surface Science, v.435, pp 117 - 121PublisherElsevier BV

SCISCIESCOPUS

Metal-HfO2-Ge capacitor: Its enhanced charge trapping properties with S-treated substrate and atomic-layer-deposited HfO2 layer Go to Link

Park, In-Sung; Jung, Yong Chan; Seong, Sejong; Ahn, Jinho; Lee, Sung Bo

ArticleIssue Date2015CitationJournal of Vacuum Science and Technology A, v.33, no.1, pp 1 - 7PublisherAmerican Institute of Physics

SCISCIESCOPUS

Resistive Switching Characteristics of Atomic-Layer-Deposited Y2O3 Insulators with Deposition Temperature Go to Link

Jung, Yong Chan; Seong, Sejong; Lee, Taehoon; Park, In-Sung; Ahn, Jinho

ArticleIssue Date2015CitationJournal of Nanoscience and Nanotechnology, v.15, no.10, pp 7586 - 7589PublisherAmerican Scientific Publishers

SCISCIESCOPUS

Structural, chemical, and electrical properties of Y2O3 thin films grown by atomic layer deposition with an (iPrCp)(2)Y(iPr-amd) precursor Go to Link

Kang, Jiehun; Jung, Yong Chan; Seong, Sejong; Lee, Taehoon; Ahn, Jinho; Noh, Wontae; Park, In-Sung

ArticleIssue Date2017CitationMaterials Science in Semiconductor Processing, v.63, pp 279 - 284PublisherPergamon Press

SCISCIESCOPUS

Uniform dehydrogenation of amorphous silicon thin films using a wide thermal annealing system Go to Link

Jung, Yong Chan; Seong, Sejong; Lee, Taehoon; Ahn, Jinho; Kim, Tae Hyun; Yeo, Won-Jae; Park, In-Sung

ArticleIssue Date2017CitationSemiconductor Science and Technology, v.32, no.2PublisherInstitute of Physics Publishing

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