Metal-HfO2-Ge capacitor: Its enhanced charge trapping properties with S-treated substrate and atomic-layer-deposited HfO2 layer
- Authors
- Park, In-Sung; Jung, Yong Chan; Seong, Sejong; Ahn, Jinho; Lee, Sung Bo
- Issue Date
- Jan-2015
- Publisher
- A V S AMER INST PHYSICS
- Citation
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, v.33, no.1, pp.1 - 7
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
- Volume
- 33
- Number
- 1
- Start Page
- 1
- End Page
- 7
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/158105
- DOI
- 10.1116/1.4904730
- ISSN
- 0734-2101
- Abstract
- The charge trapping properties of metal-HfO2-Ge capacitor as a nonvolatile memory have been investigated with (NH4)(2)S-treated Ge substrate and atomic-layer-deposited HfO2 layer. The interfacial layer generated by (NH4)(2)S-treated Ge substrate reveals a trace of -S- bonding, very sharp interface edges, and smooth surface morphology. The Ru-HfO2-Ge capacitor with (NH4)(2)S-treated Ge substrate shows an enhanced interface state with little frequency dispersion, a lower leakage current, and very reliable properties with the enhanced endurance and retention than Ru-HfO2-Ge capacitor with cyclic-cleaned Ge substrate.
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