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SCIESCOPUS

Enhancing Program Speed and Diminishing Read After Write Delay by Metal Work Function Engineering Go to Link

Shin, Seokjoong; Kim, Giuk; Choi, Hyojun; Park, Sanghyun; Seo, Kwangyou; Kim, Kwangsoo; Kim, Wanki; Ha, Daewon; Ahn, Jinho; Jeon, Sanghun

ArticleIssue Date2025CitationIEEE Electron Device Letters, v.46, no.8, pp 1433 - 1436PublisherInstitute of Electrical and Electronics Engineers

SCIESCOPUS

Experimental Analysis and Mathematical Modeling of Program Efficiency in Gate-Side Injection Type FeFETs Depending on the Gate Interlayer Go to Link

Kim, Giuk; Kim, Taeho; Choi, Hyojun; Shin, Seokjoong; Kim, Hoon; Park, Sanghyun; Seo, Kwangyou; Kim, Kwangsoo; Kim, Wanki; Ha, Daewon, et al.

ArticleIssue Date2025CitationIEEE Transactions on Electron Devices, v.72, no.9, pp 4896 - 4901PublisherInstitute of Electrical and Electronics Engineers

SCIESCOPUS

Experimental Analysis on the Interaction Between Interface Trap Charges and Polarization on the Memory Window of Metal-Ferroelectric-Insulator-Si (MFIS) FeFET Go to Link

Kim, Giuk; Choi, Hyojun; Lee, Sangho; Shin, Hunbeom; Lee, Sangmok; Nam, Yunseok; Kang, Hyunjun; Shin, Seokjoong; Kim, Hoon; Lim, Youngjin, et al.

ArticleIssue Date2024CitationIEEE TRANSACTIONS ON ELECTRON DEVICES, v.71, no.11, pp 6627 - 6632PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC

SCOPUS

Exploring FeFET Degradation Mechanisms: Mid-Interlayer as a Viable Solution for Stable Retention, Disturb Immunity, and Low Vth Variation Go to Link

Kim, Giuk; Lee, Sangho; Choi, Hyojun; Kim, Hoon; Shin, Seokjoong; Park, Sanghyun; Seo, Kwangyou; Kim, Kwangsoo; Kim, Wanki; Ahn, Jinho, et al.

ArticleIssue Date2025CitationDigest of Technical Papers - Symposium on VLSI Technology, pp 1 - 3

SCIESCOPUS

Optimizing De-trap Pulses in Gate-injection Type Ferroelectric NAND Cells to Minimize Read After Write Delay Issue Go to Link

Kim, Giuk; Choi, Hyojun; Cho, Hongrae; Lee, Sangho; Shin, Hunbeom; Kang, Hyunjun; Kim, Hoon; Shin, Seokjoong; Park, Seonjae; Kwon, Sunseong, et al.

ArticleIssue Date2024CitationIEEE Electron Device Letters, v.45, no.12, pp 2359 - 2362PublisherInstitute of Electrical and Electronics Engineers

SCOPUS

Ultrathin-Mo-Enabled NC-NAND with Sub-3.5nm HZO for Scalable High-MW Operation Go to Link

Lee, Sangho; Kim, Yongsu; Jung, Yangjin; Chang, Seungyeon; Shin, Seokjoong; Kim, Giuk; Joh, Hongrae; Kim, Woongin; Park, Sanghyun; Seo, Kwangyou, et al.

ArticleIssue Date2026Citation2025 IEEE International Electron Devices Meeting (IEDM), pp 1 - 4PublisherInstitute of Electrical and Electronics Engineers Inc.

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Browsing by Shin, SeokjoongAuthor

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