Highly Stable ZnON Thin-Film Transistors With High Field-Effect Mobility Exceeding 50 cm(2)/Vs
- Authors
- Ok, Kyung-Chul; Jeong, Hyun-Jun; Kim, Hyun-Suk; Park, Jin-Seong
- Issue Date
- Jan-2015
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- High mobility; illumination; reactive sputtering; reliability; transistors; zinc oxynitride
- Citation
- IEEE ELECTRON DEVICE LETTERS, v.36, no.1, pp.38 - 40
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE ELECTRON DEVICE LETTERS
- Volume
- 36
- Number
- 1
- Start Page
- 38
- End Page
- 40
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/158117
- DOI
- 10.1109/LED.2014.2365614
- ISSN
- 0741-3106
- Abstract
- High-performance thin-film transistors (TFTs) based on ZnON channels were fabricated using a de reactive sputtering method. To improve the photoinduced bias stability, a postannealing process was carried out at a low ambient pressure (similar to 100 mTorr, air ambient) at 250 degrees C for various annealing times (1-5 h). The transfer characteristics of the postannealed ZnON TFTs exhibited an improved subthreshold swing ranging from 0.60 to 0.42 V/decade. Other transport properties remained similar including a high mobility (mu(sat)) of >50 cm(2)Ns, a threshold voltage (Vth) of 2.5 V, and an ON OFF drain current ratio of >10(8). In addition, photoinduced bias reliability under a gate bias stress (V-G = 20 V) was significantly improved from -10.88 V (1 h) to -2.28 V (5 h). These results can be explained by the enhancement of bonding properties between Zn metal and two different anions (O, N) as stable N Zn O states.
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