Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
Dielectric Stacking Effect of Al2O3 and HfO2 in Metal-Insulator-Metal Capacitor
- Authors
- Park, In-Sung; Ryu, Kyoung-min; Jeong, Jaehack; Ahn, Jinho
- Issue Date
- Jan-2013
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Aluminum oxide; dielectric stacking; hafnium oxide; high-kappa dielectrics; metal-insulator-metal (MIM) capacitor
- Citation
- IEEE ELECTRON DEVICE LETTERS, v.34, no.1, pp.120 - 122
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE ELECTRON DEVICE LETTERS
- Volume
- 34
- Number
- 1
- Start Page
- 120
- End Page
- 122
- ISSN
- 0741-3106
- Abstract
- The dielectric stacking effects of Al2O3 and HfO2 thin layers in metal-insulator-metal capacitors are investigated for their leakage current, breakdown voltage, and voltage linearity of the dielectrics. The stacked dielectrics over three layers show the enhancement of dielectric permittivity and voltage linearity of quadratic voltage coefficient compared to one-layer dielectrics. Stacking over five layers attributes to improving leakage current density and breakdown voltage characteristics than three layers.
- Files in This Item
- Go to Link
- Appears in
Collections - 서울 공과대학 > 서울 신소재공학부 > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
Related Researcher
- Ahn, Jinho
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)