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Enhanced electrical characteristics of Au nanoparticles embedded in high-k HfO2 matrix

Authors
Yang, Jung YupKim, Ju HyungChoi, Won JoonDo, Young HoKim, Chae OkHong, Jin Pyo
Issue Date
Sep-2006
Publisher
AMER INST PHYSICS
Citation
JOURNAL OF APPLIED PHYSICS, v.100, no.6
Indexed
SCIE
SCOPUS
Journal Title
JOURNAL OF APPLIED PHYSICS
Volume
100
Number
6
URI
https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/181067
DOI
10.1063/1.2347703
ISSN
0021-8979
Abstract
We present experimental results for laser-induced Au nanoparticle (NP) embedded in a HfO2 high-k dielectric matrix. Cross-sectional transmission electron microscopy images showed that the Au NPs of 8 nm in diameter were clearly embedded in HfO2 matrix. Capacitance-voltage measurements of Pt/HfO2/Au NPs/HfO2 on p-type Si substrate reliably exhibited metal-oxide-semiconductor behavior with a large flatband shift of 4.7 V. In addition, the charge retention time at room temperature was found to exceed 10(5) h. This longer time was attributed to the higher electron barrier height via high work function of the Au NP.
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