Atomic layer deposition of MoNx thin films using a newly synthesized liquid Mo precursor
- Authors
- Kim, Byunguk; Lee, Sangmin; Kang, Taesung; Kim, Sunghoon; Koo, Sangman; Jeon, Hyeongtag
- Issue Date
- Dec-2022
- Publisher
- A V S AMER INST PHYSICS
- Citation
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, v.40, no.6, pp.1 - 10
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
- Volume
- 40
- Number
- 6
- Start Page
- 1
- End Page
- 10
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/182125
- DOI
- 10.1116/6.0002154
- ISSN
- 0734-2101
- Abstract
- Molybdenum nitride thin films are deposited using a newly synthesized liquid Mo precursor [MoCl4(THD)(THF)] in an ALD super-cycle process. The new precursor is synthesized using MoCl5 and 2,2,6,6-tetramethyl-3,5-heptanedione, which is a bidentate ligand. The synthesized precursor exists in the liquid phase at room temperature and has a characteristic of evaporating 99% at 150-220 ?. Using this new precursor in an ALD super-cycle process results in a pure MoNx thin film with few impurities (C and O). In addition, such MoNx thin films have relatively low resistivity values due to excellent crystallinity and a low impurity concentration. The films' diffusion barrier characteristics confirm that they can perform the role of a barrier at over 600℃.
- Files in This Item
-
Go to Link
- Appears in
Collections - 서울 공과대학 > 서울 신소재공학부 > 1. Journal Articles
- 서울 공과대학 > 서울 화학공학과 > 1. Journal Articles
![qrcode](https://api.qrserver.com/v1/create-qr-code/?size=55x55&data=https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/182125)
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.