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Performance Improvement of p-Channel Tin Monoxide Transistors With a Solution-Processed Zirconium Oxide Gate Dielectric
- Issue Date
- Nov-2017
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- ZrO₂ gate dielectric; spin cast; tin monoxide; p-type semiconductor; thin-film transistors
- Citation
- IEEE ELECTRON DEVICE LETTERS, v.38, no.11, pp.1543 - 1546
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE ELECTRON DEVICE LETTERS
- Volume
- 38
- Number
- 11
- Start Page
- 1543
- End Page
- 1546
- ISSN
- 0741-3106
- Abstract
- This letter reports the fabrication of p-channel tin monoxide (SnO) thin-film transistors (TFTs) with a highpermittivity zirconiumoxide (ZrO2) gate insulatorfilm, which were prepared by a low-cost spin-cast method. The spincast ZrO2 dielectrics exhibit a low leakage current density of 4.5x10(-8) A/cm(2) at 1 MV/cm. Introducing the ZrO2 dielectric in top-typeSnOTFTs allows for a reduction in the driving gate voltage range from 80 to 10 V, ascomparedwith devices with a thermal SiO2 gate insulator. Additionally, a high fieldeffect mobility of 2.5 cm(2)/Vs and an ION/OFF of 3 x10(3) were preserved.
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Related Researcher
- Jeong, Jae Kyeong
- COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)