Experimental Demonstration of a Ferroelectric HfO2-Based Content Addressable Memory Cell
- Authors
- Tan, Ava J.; Chatterjee, Korok; Zhou, Jiuren; Kwon, Daewoong; Liao, Yu-Hung; Cheema, Suraj; Hu, Chenming; Salahuddin, Sayeef
- Issue Date
- Feb-2020
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Ferroelectric; shafnium zirconium oxide; content addressable memory; ferroelectric memory; FeFET; logic-in-memory
- Citation
- IEEE ELECTRON DEVICE LETTERS, v.41, no.2, pp.240 - 243
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE ELECTRON DEVICE LETTERS
- Volume
- 41
- Number
- 2
- Start Page
- 240
- End Page
- 243
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/189907
- DOI
- 10.1109/LED.2019.2963300
- ISSN
- 0741-3106
- Abstract
- In this work, we present an experimental demonstration of a content addressable memory (CAM) cell based on ferroelectric HfO2 field effect transistors (FeFETs). Our proposed ferroelectric CAM (FeCAM) utilizes a CMOS-compatible ferroelectric material, hafnium zirconium oxide (HZO), as the gate dielectric. We discuss operation of the FeCAM cell and propose a suitable architecture to realize in-memory computation as well as single clock cycle content-driven search. In addition, the HZO FeFET is analyzed for its intrinsic memory characteristic, and design considerations are identified for improving device and therefore projected system-level performance. Our results indicate that FeCAM is well-suited to accommodate demanding modern computational needs by sealing the gaps between conventional memory, logic, and continued device scaling.
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