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Ferroelectric Field-Effect Transistor Synaptic Device With Hafnium-Silicate Interlayer
- Authors
- Kim, Sang Woo; Shin, Wonjun; Kim, Munhyeon; Kwon, Ki Ryun; Yim, Jiyong; Kim, Jeonghan; Han, Changhyeon; Jeong, Soi; Park, Eun Chan; You, Ji Won; Kim, Hyunwoo; Choi, Rino; Kwon, Daewoong
- Issue Date
- Dec-2023
- Publisher
- Institute of Electrical and Electronics Engineers
- Keywords
- FeFETs; Iron; Threshold voltage; Hafnium compounds; Zirconium; Capacitance; Ferroelectric FET; HZO; high-kappa interlayer; synaptic devices
- Citation
- IEEE Electron Device Letters, v.44, no.12, pp 1955 - 1958
- Pages
- 4
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE Electron Device Letters
- Volume
- 44
- Number
- 12
- Start Page
- 1955
- End Page
- 1958
- ISSN
- 0741-3106
1558-0563
- Abstract
- A ferroelectric field-effect-transistor (FeFET) with hafnium zirconium oxide ferroelectric layer and hafnium silicate (HfSiOx) interlayer (IL) is demonstrated. Compared to a FeFET with SiO2 IL, the proposed FeFET is confirmed to have faster program/erase operations, wider memory window, and the improved endurance/retention characteristics due to the higher dielectric constant of HfSiOx and superior interfacial state between HfxZr((1-x))O-2 and IL. The proposed FeFET demonstrates a power spectral density that is approximately two times smaller than that of conventional FeFETs and endurance exceeding 1010 cycles. This underscores its enhanced suitability for neuromorphic computing applications.
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Related Researcher
- Kwon, Daewoong
- COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)