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A Novel 3D Gate-All-Around Vertical FeFET with Back-Gate Structure for Disturbance-Less Program Operation
- Authors
- Ku, Boncheol; Sim, Jae-Min; Hur, Jae Seok; Jeong, Jae Kyeong; Song, Yun-Heub; Choi, Changhwan
- Issue Date
- May-2024
- Publisher
- Institute of Electrical and Electronics Engineers Inc.
- Citation
- 2024 IEEE International Memory Workshop, IMW 2024 - Proceedings, pp 1 - 4
- Pages
- 4
- Indexed
- SCOPUS
- Journal Title
- 2024 IEEE International Memory Workshop, IMW 2024 - Proceedings
- Start Page
- 1
- End Page
- 4
- ISSN
- 0000-0000
- Abstract
- We demonstrated 3D vertical Gate-All-Around (GAA) vertical-channel FeFET using ferroelectric (FE) Zr-doped HfO2 (HZO) and indium-gallium oxide (IGO) channel. Subthreshold swing of 90 mV/dec, large memory window (MW) of 2.5V, 2 bits/cell, and reliable 10-years retention are reported. Furthermore, new Gate-All-Around with Back-Gate (GAAB) structure and operation scheme are proposed to increase MW by improving the channel potential controllability and enhance resistance against disturb for Multi-Level Cell(MLC) operation.
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Collections - 서울 공과대학 > 서울 융합전자공학부 > 1. Journal Articles
- 서울 공과대학 > 서울 신소재공학부 > 1. Journal Articles
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Related Researcher
- Jeong, Jae Kyeong
- COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)