A 0.5-1 V,-68 dB Power Supply Rejection Capacitorless Analog LDO Using Voltage-to-Time Conversion in 28-nm CMOS
- Authors
- Jang, Jun-Hwan; Gwon, Hui-Dong; Kong, Tae-Hwang; Yang, Jun-Hyeok; Choi, Byong-Deok
- Issue Date
- Aug-2022
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Voltage control; Time-domain analysis; Regulation; Bandwidth; Circuit stability; Gain; Stability analysis; Low-dropout (LDO) regulator; power supply rejection (PSR); voltage regulator; voltage-to-time converter (VTC)
- Citation
- IEEE JOURNAL OF SOLID-STATE CIRCUITS, v.57, no.8, pp 2462 - 2473
- Pages
- 12
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE JOURNAL OF SOLID-STATE CIRCUITS
- Volume
- 57
- Number
- 8
- Start Page
- 2462
- End Page
- 2473
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/211091
- DOI
- 10.1109/JSSC.2022.3144437
- ISSN
- 0018-9200
1558-173X
- Abstract
- This article proposes an analog low-dropout (LDO) regulator using the voltage-to-time conversion technique to achieve high power-supply-rejection (PSR) at low supply voltages of less than 1 V. Integrating the time-domain signal into the current using a charge pump (CP) provides infinite dc gain, in principle, so that good regulation and high PSR can be achieved. Furthermore, a slew enhancement path using a time-converted signal is proposed to obtain a fast transient response even at low power supply voltages, and an auxiliary feedforward circuit has also been included to ensure wide load range stability. The proposed LDO designed to drive a 100-pF on-chip load capacitor and 150-mA load current was fabricated on a 28-nm CMOS process. The test measurement results show that the proposed LDO can operate in the 0.5-1-V input voltage range and achieved a high PSR of -52 to -68 dB at 1 kHz and -20 to -30 dB at 1 MHz, corresponding to the input voltage. Owing to the slew enhancement path, undershoot and overshoot were suppressed to 94 and 91 mV, respectively, for a 149-mA, 40-ns load current step.
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