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A 0.5-1 V,-68 dB Power Supply Rejection Capacitorless Analog LDO Using Voltage-to-Time Conversion in 28-nm CMOS

Authors
Jang, Jun-HwanGwon, Hui-DongKong, Tae-HwangYang, Jun-HyeokChoi, Byong-Deok
Issue Date
Aug-2022
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Keywords
Voltage control; Time-domain analysis; Regulation; Bandwidth; Circuit stability; Gain; Stability analysis; Low-dropout (LDO) regulator; power supply rejection (PSR); voltage regulator; voltage-to-time converter (VTC)
Citation
IEEE JOURNAL OF SOLID-STATE CIRCUITS, v.57, no.8, pp 2462 - 2473
Pages
12
Indexed
SCIE
SCOPUS
Journal Title
IEEE JOURNAL OF SOLID-STATE CIRCUITS
Volume
57
Number
8
Start Page
2462
End Page
2473
URI
https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/211091
DOI
10.1109/JSSC.2022.3144437
ISSN
0018-9200
1558-173X
Abstract
This article proposes an analog low-dropout (LDO) regulator using the voltage-to-time conversion technique to achieve high power-supply-rejection (PSR) at low supply voltages of less than 1 V. Integrating the time-domain signal into the current using a charge pump (CP) provides infinite dc gain, in principle, so that good regulation and high PSR can be achieved. Furthermore, a slew enhancement path using a time-converted signal is proposed to obtain a fast transient response even at low power supply voltages, and an auxiliary feedforward circuit has also been included to ensure wide load range stability. The proposed LDO designed to drive a 100-pF on-chip load capacitor and 150-mA load current was fabricated on a 28-nm CMOS process. The test measurement results show that the proposed LDO can operate in the 0.5-1-V input voltage range and achieved a high PSR of -52 to -68 dB at 1 kHz and -20 to -30 dB at 1 MHz, corresponding to the input voltage. Owing to the slew enhancement path, undershoot and overshoot were suppressed to 94 and 91 mV, respectively, for a 149-mA, 40-ns load current step.
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COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)
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