Fast spatial atomic layer deposition of Al₂O₃ at low temperature (<100 °c) as a gas permeation barrier for flexible organic light-emitting diode displayFast spatial atomic layer deposition of Al2O3 at low temperature (< 100 degrees C) as a gas permeation barrier for flexible organic light-emitting diode displays
- Other Titles
- Fast spatial atomic layer deposition of Al2O3 at low temperature (< 100 degrees C) as a gas permeation barrier for flexible organic light-emitting diode displays
- Authors
- Choi, Hagyoung; Shin, Seokyoon; Jeon, Hyeongtag; Choi, Yeongtae; Kim, Junghun; Kim, Sanghun; Chung, Seog Chul; Oh, Kiyoung
- Issue Date
- Jan-2016
- Publisher
- A V S AMER INST PHYSICS
- Citation
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, v.34, no.1, pp.1 - 7
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
- Volume
- 34
- Number
- 1
- Start Page
- 1
- End Page
- 7
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/24101
- DOI
- 10.1116/1.4934752
- ISSN
- 0734-2101
- Abstract
- The authors developed a high throughput (70 Å/min) and scalable space-divided atomic layer deposition (ALD) system for thin film encapsulation (TFE) of flexible organic light-emitting diode (OLED) displays at low temperatures (<100 °C). In this paper, the authors report the excellent moisture barrier properties of Al₂O₃ films deposited on 2G glass substrates of an industrially relevant size (370 × 470 mm²) using the newly developed ALD system. This new ALD system reduced the ALD cycle time to less than 1 s. A growth rate of 0.9 Å/cycle was achieved using trimethylaluminum as an Al source and O3 as an O reactant. The morphological features and step coverage of the Al₂O₃ films were investigated using field emission scanning electron microscopy. The chemical composition was analyzed using Auger electron spectroscopy. These deposited Al₂O₃ films demonstrated a good optical transmittance higher than 95% in the visible region based on the ultraviolet visible spectrometer measurements. Water vapor transmission rate lower than the detection limit of the MOCON test (less than 3.0 × 10⁻³ g/m² day) were obtained for the flexible substrates. Based on these results, Al₂O₃ deposited using our new high-throughput and scalable spatial ALD is considered a good candidate for preparation of TFE films of flexible OLEDs.
- Files in This Item
-
Go to Link
- Appears in
Collections - 서울 공과대학 > 서울 신소재공학부 > 1. Journal Articles
![qrcode](https://api.qrserver.com/v1/create-qr-code/?size=55x55&data=https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/24101)
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.