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Improved Stability of AlGaN/GaN Heterojunction Schottky-diode-type Hydrogen Sensor Using Constant Current Source Operation
- Authors
- Choi, June-Heang; Kim, Hyungtak; Cha, Ho-Young
- Issue Date
- Oct-2020
- Publisher
- IEEK PUBLICATION CENTER
- Keywords
- AlGaN/GaN heterojunction; Pd catalyst; Schottky-diode-type hydrogen sensor; stability; constant current bias mode
- Citation
- JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, v.20, no.5, pp.430 - 435
- Journal Title
- JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
- Volume
- 20
- Number
- 5
- Start Page
- 430
- End Page
- 435
- ISSN
- 1598-1657
- Abstract
- An AlGaN/GaN heterojunction Schottky-diode-type hydrogen sensor was fabricated with Pd catalyst and exhibited excellent response characteristics. The sensor was operated in two different modes: constant voltage and constant current bias modes. Since the diode current has an exponential relationship with its forward voltage, any small fluctuations or drift in the bias voltage results in large variations in the output current. Using a constant current bias mode of operation thus allowed more stable sensing characteristics for the Schottky-diode-type hydrogen sensor.
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Related Researcher
- Cha, Ho Young
- Engineering (Electronic & Electrical Engineering)