Influence of oxygen-plasma treatment on In-Situ SiN/AlGaN/GaN MOSHEMT with PECVD SiO<inf>2</inf> gate insulator
- Authors
- Cho, Geunho; G.; Cha, Hoyoung; H.; Kim, Hyungtak; H.
- Issue Date
- 2019
- Publisher
- MDPI AG
- Keywords
- Gallium nitride; Heterostructure; In situ SiN; Interface trap; Oxygen plasma; SiO2
- Citation
- Materials, v.12, no.23
- Journal Title
- Materials
- Volume
- 12
- Number
- 23
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/12833
- DOI
- 10.3390/ma122333968
- ISSN
- 1996-1944
- Abstract
- The influence of oxygen-plasma treatment on in situ SiN/AlGaN/GaN MOS high electron mobility transistor with SiO2 gate insulator was investigated. Oxygen-plasma treatment was performed on in situ SiN, before SiO2 gate insulator was deposited by plasma-enhanced chemical vapor deposition (PECVD). DC I-V characteristics were not changed by oxygen plasma treatment. However, pulsed I-V characteristics were improved, showing less dispersion compared to nontreated devices. During short-term gate bias stress, the threshold voltage shift was also smaller in a treated device than in an untreated one. X-ray photoemission spectroscopy also revealed that SiO2 on in situ SiN with oxygen-plasma treatment has an O/Si ratio close to the theoretical value. This suggests that the oxygen plasma treatment-modified surface condition of the SiN layer is favorable to SiO2 formation by PECVD. © 2019 by the authors.
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