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Effects of Field Plate and Buried Gate Structures on Silicon Carbide Metal-Semiconductor Field-Effect Transistors
- Authors
- Lee, Jae-Gil; Cho, Chun-Hyung; Cha, Ho-Young
- Issue Date
- May-2011
- Publisher
- IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG
- Keywords
- buried gate; field plate; MESFET; silicon carbide
- Citation
- IEICE TRANSACTIONS ON ELECTRONICS, v.E94C, no.5, pp.842 - 845
- Journal Title
- IEICE TRANSACTIONS ON ELECTRONICS
- Volume
- E94C
- Number
- 5
- Start Page
- 842
- End Page
- 845
- ISSN
- 0916-8524
- Abstract
- We investigated the effects of various field plate and buried gate structures on the DC and small signal characteristics of 4H-silicon carbide (SiC) metal-semiconductor field-effect transistors (MESFETs). In comparison with the source-connected field plate, the gate-connected field plate exhibited superior frequency response while having similar DC characteristics. In order to further enhance the output power, dual field plates were employed in conjunction with a buried gate structure.
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Related Researcher
- Cho, Chun Hyung
- Science & Technology (Department of Electronic & Electrical Convergence Engineering)