Characterization of High-Performance InGaAs QW-MOSFETs With Reliable Bi-Layer HfOxNy Gate Stack
- Authors
- Eom, Su-Keun; Kong, Min-Woo; Cha, Ho-Young; Seo, Kwang-Seok
- Issue Date
- 2019
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Indium gallium arsenide (InGaAs); III-V MOSFET; high-k gate dielectric; hafnium oxynitride (HfOxNy); PBTI reliability
- Citation
- IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, v.7, no.1, pp.908 - 913
- Journal Title
- IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
- Volume
- 7
- Number
- 1
- Start Page
- 908
- End Page
- 913
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/2772
- DOI
- 10.1109/JEDS.2019.2934745
- ISSN
- 2168-6734
- Abstract
- In this work, we report high-performance InGaAs quantum-well MOSFETs with optimized bi-layer high-k gate dielectrics incorporating high-quality plasma-assisted atomic -layer-deposited (PA-ALD) HfOxNy interfacial layer (IL). With more than 1 nm IL deposition to passivate the InGaAs surface, excellent sub-threshold characteristics (SSmin = 68 mV/dec) were achieved through the proposed gate stack technology. We performed positive-bias-temperature-instability (PBTI) measure -ments in order to ensure a reliable gate operation. The proposed bi-layer III-V gate stack achieved the excellent value of maximum gate overdrive voltage (V-OV,V-max) of 0.49 V with CET = 1.04 nm. The proposed gate stack has a great potential for III-V MOSFET technology to low power logic applications.
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