Analysis of Hot Carrier Degradation in 0.25-μm Schottky Gate AlGaN/GaN HEMTsopen accessAnalysis of Hot Carrier Degradation in 0.25-μm Schottky Gate AlGaN/GaN HEMTs
- Other Titles
- Analysis of Hot Carrier Degradation in 0.25-μm Schottky Gate AlGaN/GaN HEMTs
- Authors
- 조성인; 장원호; 차호영; 김형탁
- Issue Date
- 1-Jan-2022
- Publisher
- 한국전자파학회
- Keywords
- AlGaN/GaN HEMT; Degradation; Hot Carrier Effect; Reliability; Trap.
- Citation
- Journal of Electromagnetic Engineering and Science, v.22, no.3, pp 291 - 295
- Pages
- 5
- Journal Title
- Journal of Electromagnetic Engineering and Science
- Volume
- 22
- Number
- 3
- Start Page
- 291
- End Page
- 295
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/28580
- DOI
- 10.26866/jees.2022.3.r.89
- ISSN
- 2671-7255
2671-7263
- Abstract
- In this work, we report hot carrier-induced degradation in normally-on AlGaN/GaN high electron mobility transistors (HEMTs) with a 0.25-μm gate. To analyze the hot carrier effect, the semi-on state stress test was carried out and the DC and pulsed I-V characteristics were analyzed. The stress condition was set at the gate voltage of -3.8 V and the drain voltage of 40 V, where the drain current was at 10% of the maximum. After a stress test, the positive shift of the threshold voltage was observed and the drain current was decreased by 19%. In addition, the gate and drain lag phenomena were pronounced when measured by the pulse with a 1.23% duty cycle. The device degradation can be attributed to the hot electron-induced trapping during the semi-on stress test, which imposed the high electric field and the low channel temperature in the device.
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