A Sensitivity-controllable Shear-stress Sensor with 2 Sets of+45/-45 Degree Semiconductor Resistor-sensor Pair
- Authors
- Cho, Chun-Hyung; Cha, Ho-Young; Sung, Hyuk-Kee
- Issue Date
- Apr-2018
- Publisher
- IEEK PUBLICATION CENTER
- Keywords
- Semiconductor stress-sensor; shear-stress; sensitivity; resistor sensor
- Citation
- JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, v.18, no.2, pp.139 - 145
- Journal Title
- JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
- Volume
- 18
- Number
- 2
- Start Page
- 139
- End Page
- 145
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/3875
- DOI
- 10.5573/JSTS.2018.18.2.139
- ISSN
- 1598-1657
- Abstract
- In this paper, we investigated the most enhanced shear-stress sensor by using 2 mid-points measurements in a separate +/- 45 degrees semiconductor resistor-sensor pair. Compared to our latest works, we added an additional +/- 45 degrees semiconductor resistor-sensor pair upside down, and the sensitivity was observed to be significantly increased approximately by 100% (2 times) compared to the result for our latest work. Also, we validated our results analytically by error analysis in sensitivity. Furthermore, we proposed a simple and efficient measurement-technique for the shear-stress calculation in which we just needed to measure voltage between the midpoints without the need for calculating the voltage ratio in each resistor-sensor pair. By this technique, we could increase the shear-sensitivity by controlling the common applied voltage between the sensor pairs. As an example, for the applied voltage of 8V between the pair, the sensitivity showed a significant increase by 300 % (4 times).
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- Appears in
Collections - College of Engineering > School of Electronic & Electrical Engineering > 1. Journal Articles
- College of Science and Technology > Department of Electronic and Electrical Engineering > 1. Journal Articles
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