Ag/Sn/Ag 샌드위치 구조를 갖는 Backside Metallization을 이용한 고온 반도체 접합 기술High-temperature Semiconductor Bonding using Backside Metallization with Ag/Sn/Ag Sandwich Structure
- Other Titles
- High-temperature Semiconductor Bonding using Backside Metallization with Ag/Sn/Ag Sandwich Structure
- Authors
- 최진석; 안성진
- Issue Date
- Jan-2020
- Publisher
- 한국마이크로전자및패키징학회
- Keywords
- backside metallization; die attach; Ag/Sn/Ag sandwich structure; high-temperature semiconductor; soldering
- Citation
- 마이크로전자 및 패키징학회지, v.27, no.1, pp.1 - 7
- Journal Title
- 마이크로전자 및 패키징학회지
- Volume
- 27
- Number
- 1
- Start Page
- 1
- End Page
- 7
- URI
- https://scholarworks.bwise.kr/kumoh/handle/2020.sw.kumoh/19090
- ISSN
- 1226-9360
- Abstract
- The backside metallization process is typically used to attach a chip to a lead frame for semiconductor packaging because it has excellent bond-line and good electrical and thermal conduction. In particular, the backside metal with the Ag/Sn/Ag sandwich structure has a low-temperature bonding process and high remelting temperature because the interfacial structure composed of intermetallic compounds with higher melting temperatures than pure metal layers after die attach process. Here, we introduce a die attach process with the Ag/Sn/Ag sandwich structure to apply commercial semiconductor packages. After the die attachment, we investigated the evolution of the interfacial structures and evaluated the shear strength of the Ag/Sn/Ag sandwich structure and compared to those of a commercial backside metal (Au-12Ge).
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Collections - Department of Materials Science and Engineering > 1. Journal Articles
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