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Bias-Stress-Induced Instabilities in P-Type Cu2O Thin-Film Transistors

Authors
Park, Ick-JoonJeong, Chan-YongMyeonghun, U.Song, Sang-HunCho, In-TakLee, Jong-HoCho, Eou-SikKwon, Hyuck-In
Issue Date
May-2013
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Keywords
Bias-stress-induced instability; charge trapping; p-type copper oxide (Cu2O) thin-film transistors (TFTs); trap state creation
Citation
IEEE ELECTRON DEVICE LETTERS, v.34, no.5, pp 647 - 649
Pages
3
Journal Title
IEEE ELECTRON DEVICE LETTERS
Volume
34
Number
5
Start Page
647
End Page
649
URI
https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/14674
DOI
10.1109/LED.2013.2253758
ISSN
0741-3106
1558-0563
Abstract
We investigate the gate bias-stress-induced instabilities of p-type copper oxide (Cu2O) thin-film transistors (TFTs). Transfer curves measured before and after the application of constant gate bias stress under air and vacuum environments show that the partial pressure of the oxygen in the environment does not much affect the transfer characteristics and bias-stress-induced instabilities of the Cu2O TFTs. During the negative gate bias stresses, the transfer curves shift to the negative direction without a significant variation of the shape, which is attributed to the hole trapping in the interface or bulk dielectric layers with a negligible creation of additional interface trap states. During the positive gate bias stresses, a threshold voltage hardly moves to the positive direction because of the lack of free electron inside the p-type Cu2O, but a notable degradation of the subthreshold slope is observed. From the recovery characteristics, the generated traps during the positive gate bias stress are estimated to be metastable ones in p-type Cu2O TFTs.
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Song, Sang Hun
창의ICT공과대학 (전자전기공학부)
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