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Effects of Er-Doping on Amorphous InZnSnO/InZnSnO: Er Double-Channel Thin-Film Transistors
- Authors
- Yang, Ji-Woong; Na, Yun-Been; Shin, Jae-Heon; Hong, Chan-Hwa; Seo, Woo-Hyung; Kim, Kyung-Hyun; Song, Chang-Woo; Song, Sang-Hun; Kwon, Hyuck-In; Cheong, Woo-Seok
- Issue Date
- May-2017
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Keywords
- Doped Er; a-IZTO TFT; Mobility; Stability
- Citation
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.17, no.5, pp 3415 - 3419
- Pages
- 5
- Journal Title
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
- Volume
- 17
- Number
- 5
- Start Page
- 3415
- End Page
- 3419
- ISSN
- 1533-4880
1533-4899
- Abstract
- We study the effects of Er-doping on the electrical performances and stabilities of amorphous InZn-SnO(IZTO)/IZTO: Er double-channel thin-film transistors (TFTs). Compared to conventional IZTO single-channel TFTs, the IZTO(front)/IZTO: Er(back) double-channel TFTs exhibits higher field-effect mobility and improved stability under both positive and negative bias stresses. From the X-ray photoelectron spectroscopy for the double channel, we observe that Er doping contributes to an enhancement of the oxygen bonding and a reduction of oxygen vacancies in the IZTO thin-film. These results show that the Er can be an effective carrier suppressor in IZTO-based TFTs.
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