Conformally Gated Surface Conducting Behaviors of Single-Walled Carbon Nanotube Thin-Film-Transistorsopen access
- Authors
- Kim, Kyung-Tae; Lee, Keon Woo; Moon, Sanghee; Park, Joon Bee; Park, Chan-Yong; Nam, Seung-Ji; Kim, Jaehyun; Lee, Myoung-Jae; Heo, Jae Sang; Park, Sung Kyu
- Issue Date
- Jun-2021
- Publisher
- MDPI
- Keywords
- single-walled carbon nanotube (SWCNTs); high purity SWCNT separation process; thin-film transistors (TFTs)
- Citation
- MATERIALS, v.14, no.12
- Journal Title
- MATERIALS
- Volume
- 14
- Number
- 12
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/48327
- DOI
- 10.3390/ma14123361
- ISSN
- 1996-1944
1996-1944
- Abstract
- Semiconducting single-walled carbon nanotubes (s-SWCNTs) have gathered significant interest in various emerging electronics due to their outstanding electrical and mechanical properties. Although large-area and low-cost fabrication of s-SWCNT field effect transistors (FETs) can be easily achieved via solution processing, the electrical performance of the solution-based s-SWCNT FETs is often limited by the charge transport in the s-SWCNT networks and interface between the s-SWCNT and the dielectrics depending on both s-SWCNT solution synthesis and device architecture. Here, we investigate the surface and interfacial electro-chemical behaviors of s-SWCNTs. In addition, we propose a cost-effective and straightforward process capable of minimizing polymers bound to s-SWCNT surfaces acting as an interfering element for the charge carrier transport via a heat-assisted purification (HAP). With the HAP treated s-SWCNTs, we introduced conformal dielectric configuration for s-SWCNT FETs, which are explored by a carefully designed wide array of electrical and chemical characterizations with finite-element analysis (FEA) computer simulation. For more favorable gate-field-induced surface and interfacial behaviors of s-SWCNT, we implemented conformally gated highly capacitive s-SWCNT FETs with ion-gel dielectrics, demonstrating field-effect mobility of similar to 8.19 cm(2)/V.s and on/off current ratio of similar to 10(5) along with negligible hysteresis.
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