Modeling of Optimized Lattice Mismatch by Carbon-Dioxide Laser Annealing on (In, Ga) Co-Doped ZnO Multi-Deposition Thin Films Introducing Designed Bottom Layersopen access
- Authors
- Yun, J.; Bae, M.-S.; Baek, J.S.; Kim, Tae Wan; Kim, S.-J.; Koh, Jung Hyuk
- Issue Date
- Jan-2023
- Publisher
- MDPI
- Keywords
- (In, Ga) co-doped ZnO; CO2 laser annealing; FoM; lattice mismatch; TCO
- Citation
- Nanomaterials, v.13, no.1
- Journal Title
- Nanomaterials
- Volume
- 13
- Number
- 1
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/60617
- DOI
- 10.3390/nano13010045
- ISSN
- 2079-4991
2079-4991
- Abstract
- In this study, modeling of optimized lattice mismatch by carbon-dioxide annealing on (In, Ga) co-doped ZnO multi-deposition thin films was investigated with crystallography and optical analysis. (In, Ga) co-doped ZnO multi-deposition thin films with various types of bottom layers were fabricated on sapphire substrates by solution synthesis, the spin coating process, and carbon-dioxide laser irradiation with post annealing. (In, Ga) co-doped ZnO multi-deposition thin films with Ga-doped ZnO as the bottom layer showed the lowest mismatch ratio between the substrate and the bottom layer of the film. The carbon-dioxide laser annealing process can improve electrical properties by reducing lattice mismatch. After applying the carbon-dioxide laser annealing process to the (In, Ga) co-doped ZnO multi-deposition thin films with Ga-doped ZnO as the bottom layer, an optimized sheet resistance of 34.5 kΩ/sq and a high transparency rate of nearly 90% in the visible light wavelength region were obtained. © 2022 by the authors.
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