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Effects of Mg Suppressor Layer on the InZnSnO Thin-Film Transistors
- Authors
- Song, Chang-Woo; Kim, Kyung-Hyun; Yang, Ji-Woong; Kim, Dae-Hwan; Choi, Yong-Jin; Hong, Chan-Hwa; Shin, Jae-Heon; Kwon, Hyuck-In; Song, Sang-Hun; Cheong, Woo-Seok
- Issue Date
- Apr-2016
- Publisher
- IEEK PUBLICATION CENTER
- Keywords
- Mg suppression layer; a-ITZO TFT; electrical performances and stabilities; oxygen vacancy
- Citation
- JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, v.16, no.2, pp 198 - 203
- Pages
- 6
- Journal Title
- JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
- Volume
- 16
- Number
- 2
- Start Page
- 198
- End Page
- 203
- ISSN
- 1598-1657
2233-4866
- Abstract
- We investigate the effects of magnesium (Mg) suppressor layer on the electrical performances and stabilities of amorphous indium-zinc-tin-oxide (a-ITZO) thin-film transistors (TFTs). Compared to the ITZO TFT without a Mg suppressor layer, the ITZO: Mg TFT exhibits slightly smaller field-effect mobility and much reduced subthreshold slope. The ITZO: Mg TFT shows improved electrical stabilities compared to the ITZO TFT under both positive-bias and negative-bias-illumination stresses. From the Xray photoelectron spectroscopy O1s spectra with fitted curves for ITZO and ITZO: Mg films, we observe that Mg doping contributes to an enhancement of the oxygen bond without oxygen vacancy and a reduction of the oxygen bonds with oxygen vacancies. This result shows that the Mg can be an effective suppressor in a-ITZO TFTs.
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