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Electrical Transport Characteristics of PEDOT:PSS/n-Si Schottky Junction Diodes and Electrical Degradation in Hybrid Solar Cells
- Authors
- Hyung, Jung-Hwan; Kim, Gil-Sung; Jeong, Jin-Tak; Choi, In-Hwan; Hong, Chang-Hee; Yun, Seoungjin; Koh, Jung-Hyuk; Lee, Sang-Kwon
- Issue Date
- Apr-2015
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Keywords
- PEDOT:PSS; Schottky Junction Diode; Electrical Degradation; Current-Voltage Measurement; Power Conversion Efficiency
- Citation
- JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, v.10, no.2, pp 229 - 233
- Pages
- 5
- Journal Title
- JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS
- Volume
- 10
- Number
- 2
- Start Page
- 229
- End Page
- 233
- ISSN
- 1555-130X
1555-1318
- Abstract
- We have recently reported on the electrical transport characteristics of PEDOT:PSS/n-Si Schottky junction diodes, which demonstrated excellent rectifying behavior. In this study, we investigated in further detail the electrical transport properties of Schottky diodes and the electrical degradation in PEDOT:PSS-based solar cells. To examine the electrical properties, Schottky barrier heights, and ideality factors of Au/PEDOT:PSS/n-Si Schottky diodes, both current-voltage and capacitance-voltage measurements were conducted. In addition, we fabricated hybrid PEDOT:PSS/n-Si solar cells to compare the electrical degradation of the devices with and without polymethylmethacrylate (PMMA) layers. Our experimental results suggest that the presence of a PMMA layer in a PEDOT:PSS/n-Si solar cell significantly reduces the electrical degradation resulting from air exposures of up to 10 days.
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