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Effect of the p-type GaN thickness on the near-ultraviolet light-emitting diodes
- Authors
- Choi, Hyo-Shik; Shin, Dong Soo; Shim, Jong In
- Issue Date
- Jan-2016
- Publisher
- Institute of Electrical and Electronics Engineers Inc.
- Citation
- 2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015, v.2, pp 1 - 2
- Pages
- 2
- Indexed
- SCOPUS
- Journal Title
- 2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015
- Volume
- 2
- Start Page
- 1
- End Page
- 2
- ISSN
- 0000-0000
- Abstract
- We analyzed the influence of the p-type GaN layer thickness on the 380nm band near-ultraviolet light-emitting diodes. Both electrical and optical characteristics of the LEDs were getting worse p-type GaN layer thickness increases with growth time. We suggest that the possible degradation mechanisms of characteristics are due to the increase of the non-radiative (NR) recombination rate in the active region as a result of thermal damage during p-type GaN layer growth process. © 2015 IEEE.
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Related Researcher
- Shin, Dong Soo
- ERICA 첨단융합대학 (ERICA 반도체·디스플레이공학전공)