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Carrier overflow in InGaN/GaN light-emitting diodes investigated by temperature-dependent short-circuit current characteristics
- Issue Date
- 2016
- Publisher
- Institute of Electrical and Electronics Engineers Inc.
- Citation
- 2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015, v.2, pp.1 - 2
- Indexed
- SCOPUS
- Journal Title
- 2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015
- Volume
- 2
- Start Page
- 1
- End Page
- 2
- Abstract
- The temperature dependence of the short-circuit current in the InGaN/GaN multiple-quantum-well light-emitting diode is investigated. From the experiments, we demonstrate that the carrier overflow to the p-GaN clad occurs more severely with decreasing temperature, resembling the behavior of the efficiency droop and the open-circuit voltage. © 2015 IEEE.
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Related Researcher
- Shim, Jong In
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY (DEPARTMENT OF PHOTONICS AND NANOELECTRONICS)