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Importance of the radiative recombination rate to efficiency droop in InGaN-based light-emitting diodes
- Authors
- Shim, Jong-In; Kim, Hyunsung; Shin, Dong Soo
- Issue Date
- Nov-2014
- Publisher
- OSA - The Optical Society
- Citation
- Asia Communications and Photonics Conference, ACP, pp 1 - 3
- Pages
- 3
- Indexed
- SCOPUS
- Journal Title
- Asia Communications and Photonics Conference, ACP
- Start Page
- 1
- End Page
- 3
- ISSN
- 2162-108X
- Abstract
- Experimental efficiency droop phenomena have been consistently explained by the saturation of the radiative recombination rate in InGaN quantum well at low current and subsequent increase in the nonradiative recombination rates at high current. ? OSA 2014
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Related Researcher
- Shim, Jong In
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY (DEPARTMENT OF PHOTONICS AND NANOELECTRONICS)