Enhanced Radiative Recombination Rate by Local Potential Fluctuation in InGaN/AlGaN Near-Ultraviolet Light-Emitting Diodesopen access
- Authors
- Islam, Abu Bashar Mohammad Hamidul; Shin, Dong-Soo; Shim, Jong-In
- Issue Date
- Mar-2019
- Publisher
- MDPI
- Keywords
- light-emitting diodes; indium composition; defects; piezoelectric field; potential fluctuation
- Citation
- Applied Sciences-basel, v.9, no.5, pp 1 - 12
- Pages
- 12
- Indexed
- SCIE
SCOPUS
- Journal Title
- Applied Sciences-basel
- Volume
- 9
- Number
- 5
- Start Page
- 1
- End Page
- 12
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/3437
- DOI
- 10.3390/app9050871
- ISSN
- 2076-3417
2076-3417
- Abstract
- We investigate the differences in optoelectronic performances of InGaN/AlGaN multiple-quantum-well (MQW) near-ultraviolet light-emitting diodes by using samples with different indium compositions. Various macroscopic characterizations have been performed to show that the strain-induced piezoelectric field (F-pz), the crystal quality, and the internal quantum efficiency increase with the sample's indium composition. This improved performance is owing to the carrier recombination at relatively defect-free indium-rich localized sites, caused by the local in-plane potential-energy fluctuation in MQWs. The potential-energy fluctuation in MQWs are considered to be originating from the combined effects of the inhomogeneous distribution of point defects, F-pz, and indium compositions.
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Collections - COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY > DEPARTMENT OF PHOTONICS AND NANOELECTRONICS > 1. Journal Articles
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