Synthesize of metal-semiconductor segmented nanowire by electrodeposition
- Authors
- Eom, H.; Yoo, B.
- Issue Date
- 2010
- Citation
- Materials Research Society Symposium Proceedings, v.1206, pp.23 - 27
- Indexed
- SCOPUS
- Journal Title
- Materials Research Society Symposium Proceedings
- Volume
- 1206
- Start Page
- 23
- End Page
- 27
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/40462
- ISSN
- 0272-9172
- Abstract
- Metal-semiconductor segmented nanowire was synthesized to increase the thermopower factor with enhancing electrical conductivity by inserting metal. Various electrodeposition were performed to fabricate metal-semiconductor (Ag-BiTe) segmented nanowire structure. Metalmetal (Ag-Ni) segmented structure was fabricated by electrodeposition in dual bath and semimetal segmented nanowire structure was fabricated by galvanic-displacement electrodeposition with metal-metal segmented structure. The morphology and structural characteristics of these various segmented nanowire were investigated to understand the possibility of this segmented nanowire as a thermoelectric material. © 2010 Materials Research Society.
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