Argon and Oxygen Gas Flow Rate Dependency of Sputtering-Based Indium-Gallium-Zinc Oxide Thin-Film Transistorsopen access
- Authors
- Han, Youngmin; Lee, Dong Hyun; Cho, Eou-Sik; Kwon, Sang Jik; Yoo, Hocheon
- Issue Date
- Jul-2023
- Publisher
- MDPI
- Keywords
- a-IGZO; magnetron sputtering; thin-film transistors; oxygen vacancy; oxygen flow rate
- Citation
- MICROMACHINES, v.14, no.7
- Journal Title
- MICROMACHINES
- Volume
- 14
- Number
- 7
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/88827
- DOI
- 10.3390/mi14071394
- ISSN
- 2072-666X
- Abstract
- Oxygen vacancies are a major factor that controls the electrical characteristics of the amorphous indium-gallium-zinc oxide transistor (a-IGZO TFT). Oxygen vacancies are affected by the composition ratio of the a-IGZO target and the injected oxygen flow rate. In this study, we fabricated three types of a-IGZO TFTs with different oxygen flow rates and then investigated changes in electrical characteristics. Atomic force microscopy (AFM) was performed to analyze the surface morphology of the a-IGZO films according to the oxygen gas rate. Furthermore, X-ray photoelectron spectroscopy (XPS) analysis was performed to confirm changes in oxygen vacancies of a-IGZO films. The optimized a-IGZO TFT has enhanced electrical characteristics such as carrier mobility (& mu;) of 12.3 cm(2)/V & BULL;s, on/off ratio of 1.25 x 10(10) A/A, subthreshold swing (S.S.) of 3.7 V/dec, and turn-on voltage (V-to) of -3 V. As a result, the optimized a-IGZO TFT has improved electrical characteristics with oxygen vacancies having the highest conductivity.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - IT융합대학 > 전자공학과 > 1. Journal Articles
![qrcode](https://api.qrserver.com/v1/create-qr-code/?size=55x55&data=https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/88827)
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.