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A Novel 3D Gate-All-Around Vertical FeFET with Back-Gate Structure for Disturbance-Less Program Operation

Ku, Boncheol; Sim, Jae-Min; Hur, Jae Seok; Jeong, Jae Kyeong; Song, Yun-Heub; Choi, Changhwan

ArticleIssue Date2024Citation2024 IEEE International Memory Workshop, IMW 2024 - Proceedings, pp 1 - 4PublisherInstitute of Electrical and Electronics Engineers Inc.

SCIESCOPUS

Analog Synaptic Transistor with Al-Doped HfO2Ferroelectric Thin Film

Kim, Duho; Jeon, Yu-Rim; Ku, Boncheol; Chung, Chulwon; Kim, Tae Heun; Yang, Sangheok; Won, Uiyeon; Jeong, Taeho; Choi, Changhwan

ArticleIssue Date2021CitationACS APPLIED MATERIALS & INTERFACES, v.13, no.44, pp.52743 - 52753PublisherAMER CHEMICAL SOC

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Bio-realistic synaptic characteristics in the cone-shaped ZnO memristive device Go to Link open access

Sokolov, Andrey Sergeevich; Jeon, Yu-Rim; Kim, Sohyeon; Ku, Boncheol; Choi, Changhwan

ArticleIssue Date2019CitationNPG ASIA MATERIALS, v.11, pp.1 - 15PublisherNATURE PUBLISHING GROUP

SCIESCOPUS

Cellulose Nanocrystal Based Bio-Memristor as a Green Artificial Synaptic Device for Neuromorphic Computing Applications Go to Link

Hussain, Tassawar; Abbas, Haider; Youn, Chulmin; Lee, Hojin; Boynazarov, Turgun; Ku, Boncheol; Jeon, Yu-Rim; Han, Hoonhee; Lee, Jong Hyeon; Choi, Changhwan, et al.

ArticleIssue Date2022CitationADVANCED MATERIALS TECHNOLOGIES, v.7, no.2, pp 1 - 13PublisherWILEY

SCISCIESCOPUS

Compliance-Free, Digital SET and Analog RESET Synaptic Characteristics of Sub-Tantalum Oxide Based Neuromorphic Device Go to Link open access

Abbas, Yawar; Jeon, Yu-Rim; Sokolov, Andrey Sergeevich; Kim, Sohyeon; Ku, Boncheol; Choi, Changhwan

ArticleIssue Date2018CitationScientific Reports, v.8, no.1PublisherNature Publishing Group

SCIESCOPUS

Effect of Hydrogen Profile in Flash Memory SiNx Charge Trap Layer with Different Silicon to Nitrogen Ratios Go to Link open access

Choi, Sehyeon; Lim, Yunseo; Kim, Sejin; Park, San; Ku, Boncheol; Kim, Hyungjun; Yang, Jaehyun; Kim, Bio; Son, Youngseon; Choi, Hanmei, et al.

ArticleIssue Date2025CitationAdvanced Electronic Materials, v.11, no.15, pp 1 - 9PublisherWiley-VCH Verlag

SCIESCOPUS

Engineering synaptic characteristics of TaOx/HfO2 bi-layered resistive switching device Go to Link

Kim, Sohyeon; Abbas, Yawar; Jeon, Yu-Rim; Sokolov, Andrey Sergeevich; Ku, Boncheol; Choi, Changhwan

ArticleIssue Date2018CitationNANOTECHNOLOGY, v.29, no.41PublisherIOP PUBLISHING LTD

SCOPUS

Fast Thermal Quenching on the Ferroelectric Al:HfO2 Thin Film with Record Polarization Density and Flash Memory Application Go to Link

Ku, Boncheol; Choi, Seonjun; Song, Yun Heub; Choi, Changhwan

ArticleIssue Date2020CitationDigest of Technical Papers - Symposium on VLSI Technology, v.2020-June, pp 1 - 2

SCIESCOPUS

Grain size engineering via a Hf0.5Zr0.5O2 seed layer for FeFET memory and synaptic devices Go to Link

Park, Junhyeok; Chung, Chulwon; Ku, Boncheol; Yun, Seunghyeon; Park, Kyungsoo; Choi, Changhwan

ArticleIssue Date2025CitationNanoscale, v.17, no.16, pp 10324 - 10333PublisherRoyal Society of Chemistry

SCIESCOPUS

Hf0.5Zr0.5O2/HfO2/Hf0.5 Zr0.5O2 laminated thin films and CF4 plasma passivation for improved memory and synaptic characteristics of ferroelectric field-effect transistors Go to Link

Park, Kyungsoo; Chung, Chulwon; Ku, Boncheol; Yun, Seunghyeon; Park, Junhyeok; Choi, Changhwan

ArticleIssue Date2025CitationNanoscale, v.17, no.10, pp 5689 - 5699PublisherRoyal Society of Chemistry

SCIESCOPUS

Improved switching and synapse characteristics using PEALD SiO2 thin film in Cu/SiO2/ZrO2/Pt device Go to Link

Lee, Dohee; Sokolov, Andrey S.; Ku, Boncheol; Jeon, Yu-Rim; Kim, Ho Du; Kim, Tae Hyeon; Kim, Hwan Gun; Choi, Chang hwan

ArticleIssue Date2021CitationApplied Surface Science, v.547, pp.1 - 10PublisherElsevier B.V.

SCIESCOPUS

Influence of chlorine on the memory characteristics of MONOS device with Plasma-Enhanced atomic layer deposited Si3N4 charge trap layer Go to Link

Kim, Sejin; Choi, Sehyeon; Park, San; Ku, Boncheol; Kim, Hyungjun; Lim, Yun Seo; Park, Ji Su; Yang, Jaehyun; Kim, Bio; Son, Youngseon, et al.

ArticleIssue Date2025CitationApplied Surface Science, v.698, pp 1 - 8PublisherElsevier BV

SCISCIESCOPUS

Influence of oxygen vacancies in ALD HfO2-x thin films on non-volatile resistive switching phenomena with a Ti/HfO2-x/Pt structure Go to Link

Sokolov, Andrey Sergeevich; Jeon, Yu-Rim; Kim, Sohyeon; Ku, Boncheol; Lim, Donghwan; Han, Hoonhee; Chae, Myeong Gyoon; Lee, Jaeho; Ha, Beom Gil; Choi, Changhwan

ArticleIssue Date2018CitationApplied Surface Science, v.434, pp 822 - 830PublisherElsevier BV

SCISCIESCOPUS

Interface engineering of ALD HfO2-based RRAM with Ar plasma treatment for reliable and uniform switching behaviors Go to Link

Ku, Boncheol; Abbas, Yawar; Sokolov, Andrey Sergeevich; Choi, Changhwan

ArticleIssue Date2018CitationJournal of Alloys and Compounds, v.735, pp 1181 - 1188PublisherElsevier BV

SCIESCOPUS

Structural engineering of tantalum oxide based memristor and its electrical switching responses using rapid thermal annealing Go to Link

Abbas, Yawar; Sokolov, Andrey Sergeevich; Jeon, Yu-Rim; Kim, Sohyeon; Ku, Boncheol; Choi, Changhwan

ArticleIssue Date2018CitationJOURNAL OF ALLOYS AND COMPOUNDS, v.759, pp.44 - 51PublisherELSEVIER SCIENCE SA

SCIESCOPUS

Zirconium-doped hafnia (HfZrOx) ferroelectric capacitor with atomic layer deposited HfO2, ZrO2, and La2O3 interfacial layers Go to Link

Chung, Chulwon; Lim, Jiyeon; Ku, Boncheol; Park, Kyungsoo; Choi, Changhwan

ArticleIssue Date2025CitationCeramics International, v.51, no.20, pp 30086 - 30092PublisherElsevier

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Browsing by Ku, BoncheolAuthor

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