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A six-level ferroelectric storage cell based on a bidirectional imprint field Go to Link

Kim, Chaeheon; Hwang, Junghyeon; Shin, Hunbeom; Ahn, Jinho; Jeon, Sanghun

ArticleIssue Date2024CitationJournal of Materials Chemistry C, v.12, no.37, pp 15188 - 15200PublisherRoyal Society of Chemistry

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Achieving Morphotropic Phase Boundary at Extremely Low-Temperature (200 °C) in HZO (>10 nm) Films Using Microwave Annealing Go to Link

Jung, Taeseung; Shin, Hunbeom; Ahn, Jinho; Jeon, Sanghun

ArticleIssue Date2025CitationIEEE Transactions on Electron Devices, v.72, no.6, pp 3076 - 3080PublisherInstitute of Electrical and Electronics Engineers

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Damage mitigation as a strategy to achieve high ferroelectricity and reliability in hafnia for random-access-memory Go to Link

Hwang, Junghyeon; Shin, Hunbeom; Kim, Chaeheon; Ahn, Jinho; Jeon, Sanghun

ArticleIssue Date2024CitationJournal of Materials Chemistry C, v.13, no.1, pp 214 - 229PublisherRoyal Society of Chemistry

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Enhancement of performance and reliability in MOSFETs via high-pressure microwave annealing Go to Link

Kang, Geonhyeong; Shin, Hunbeom; Kim, Seungyeob; Zhang, Lingwei; Kim, Giuk; Lee, Sujeong; Nam, Yunseok; Kim, Chaeheon; Kim, Hoon; Ahn, Jinho, et al.

ArticleIssue Date2025CitationJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, v.43, no.1, pp 1 - 6PublisherAmerican Institute of Physics

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Experimental Analysis on the Interaction Between Interface Trap Charges and Polarization on the Memory Window of Metal-Ferroelectric-Insulator-Si (MFIS) FeFET Go to Link

Kim, Giuk; Choi, Hyojun; Lee, Sangho; Shin, Hunbeom; Lee, Sangmok; Nam, Yunseok; Kang, Hyunjun; Shin, Seokjoong; Kim, Hoon; Lim, Youngjin, et al.

ArticleIssue Date2024CitationIEEE TRANSACTIONS ON ELECTRON DEVICES, v.71, no.11, pp 6627 - 6632PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC

SCIESCOPUS

First Demonstration of Thermally Stable Zr:HfO2 Ferroelectrics Via Inserting AlN Interlayer Go to Link

Lee, Sangmok; Kim, Giuk; Lee, Sangho; Shin, Hunbeom; Lim, Youngjin; Kim, Kang; Kim, Do-Hyung; Oh, Il-Kwon; Ko Park, Sang-Hee; Ahn, Jinho, et al.

ArticleIssue Date2024CitationIEEE ELECTRON DEVICE LETTERS, v.45, no.9, pp 1578 - 1581PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS IN

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Imprinted Antiferroelectric with Low Damage Process for High Performance Negative Capacitance NAND Flash Memory Go to Link

Lee, Sangho; Kim, Giuk; Nam, Yunseok; Jeong, Yeongseok; Kim, Taeho; Shin, Hunbeom; Lee, Sangmok; Ahn, Jinho; Jeon, Sanghun

ArticleIssue Date2025CitationIEEE Electron Device Letters, v.46, no.4, pp 572 - 575PublisherInstitute of Electrical and Electronics Engineers

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In-depth Analysis of the Hafnia Ferroelectrics as a Key Enabler for Low Voltage & QLC 3D VNAND beyond 1K Layers: Experimental Demonstration and Modeling Go to Link

Kim, Giuk; Choi, Hyojun; Shin, Hunbeom; Lee, Sangho; Lee, Sangmok; Nam, Yunseok; Jung, Minhyun; Myeong, Ilho; Kim, Kijoon; Woo, Jongho, et al.

ArticleIssue Date2024CitationDigest of Technical Papers - Symposium on VLSI Technology, pp 1 - 2

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Kinetically Stabilized Hafnia Ferroelectric of Al-Doped HfO2 Film by Fast Ramping and Fast Cooling Process Go to Link

Zhang, Lingwei; Kim, Giuk; Lee, Sangho; Shin, Hunbeom; Lim, Youngjin; Kim, Kang; Oh, Il-Kwon; Park, Sang-Hee Ko; Ahn, Jinho; Jeon, Sanghun

ArticleIssue Date2024CitationIEEE Transactions on Electron Devices, v.71, no.12, pp 7398 - 7404PublisherInstitute of Electrical and Electronics Engineers

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Low-Damage Processed and High-Pressure Annealed High-k Hafnium Zirconium Oxide Capacitors near Morphotropic Phase Boundary with Record-Low EOT of 2.4Å & high-k of 70 for DRAM Technology

Gaddam, Venkateswarlu; Hwang, Junghyeon; Shin, Hunbeom; Kim, Chaeheon; Kim, Giuk; Kim, Hyung-Jun; Lee, Jooho; Kim, Hyun-Cheol; Park, Bumsu; Lim, Suhwan, et al.

ArticleIssue Date2024CitationDigest of Technical Papers - Symposium on VLSI Technology, pp 1 - 2

SCIESCOPUS

Low-Temperature (450 °C) Crystallization of Al:HfO2 Ferroelectric Thin Films Enabled by Microwave Annealing Process Go to Link

Kim, Giuk; Zhang, Lingwei; Lee, Sangho; Shin, Hunbeom; Lim, Youngjin; Kim, Kang; Oh, Il-Kwon; Park, Sang-Hee Ko; Ahn, Jinho; Jeon, Sanghun

ArticleIssue Date2025CitationIEEE Transactions on Electron Devices, v.72, no.10, pp 5538 - 5543PublisherInstitute of Electrical and Electronics Engineers

SCIESCOPUS

Optimizing De-trap Pulses in Gate-injection Type Ferroelectric NAND Cells to Minimize Read After Write Delay Issue Go to Link

Kim, Giuk; Choi, Hyojun; Cho, Hongrae; Lee, Sangho; Shin, Hunbeom; Kang, Hyunjun; Kim, Hoon; Shin, Seokjoong; Park, Seonjae; Kwon, Sunseong, et al.

ArticleIssue Date2024CitationIEEE Electron Device Letters, v.45, no.12, pp 2359 - 2362PublisherInstitute of Electrical and Electronics Engineers

SCIESCOPUS

Positive Interaction between Charge Trapping and Polarization Switching in Metal-Interlayer-Ferroelectric-Interlayer-Silicon (MIFIS) Ferroelectric Field-Effect Transistor Go to Link

Choi, Hyojun; Kim, Giuk; Lee, Sangho; Shin, Hunbeom; Lim, Youngjin; Kim, Kang; Kim, Do-Hyung; Oh, Il-Kwon; Park, Sang-Hee Ko; Ahn, Jinho, et al.

ArticleIssue Date2024CitationIEEE Electron Device Letters, v.45, no.12, pp 2351 - 2354PublisherInstitute of Electrical and Electronics Engineers

SCOPUS

Record-Low EOT(3.6Å) & Jleak(7×10-8A/cm2@0.8V) HZO by Dielectric-Selective Microwave Annealing Go to Link

Shin, Hunbeom; Kim, Giuk; Lee, Sujeong; Kang, Geonhyeong; Choi, Hyojun; Jung, Taeseung; Jeon, Sanghun; Kim, Hyung-Jun; Ahn, Jinho

ArticleIssue Date2025CitationIEEE International Reliability Physics Symposium Proceedings, pp 1 - 9

SCIESCOPUS

Stabilization of Morphotropic Phase Boundary in Hafnia via Microwave Low-Temperature Crystallization Process for Next-Generation Dynamic Random Access Memory Technology Go to Link

Shin, Hunbeom; Kim, Giuk; Lee, Sujeong; Choi, Hyojun; Lee, Sangho; Lee, Sangmok; Nam, Yunseok; Kang, Geonhyeong; Kim, Hyungjun; Ahn, Jinho, et al.

ArticleIssue Date2024Citationphysica status solidi (RRL) - Rapid Research Letters, v.18, no.9, pp 1 - 7PublisherWiley - VCH Verlag GmbH & CO. KGaA

SCIESCOPUS

Stabilized negative capacitance for near-theoretical efficiency and high reliability in charge trap flash memory Go to Link

Lee, Sangho; Kim, Giuk; Nam, Yunseok; Jeong, Yangjin; Kang, Hyunjun; Kim, Woongjin; Shin, Hunbeom; Shin, Mincheol; Park, Sanghyun; Seo, Kwangyou, et al.

ArticleIssue Date2025CitationMaterials Today Physics, v.58, pp 1 - 10PublisherELSEVIER SCIENCE BV

SCOPUS

The Opportunity of Anti-ferroelectrics in FeFET for Emerging Non-Volatile Memory Applications Go to Link

Choi, Hyojun; Kim, Giuk; Shin, Hunbeom; Nam, Yunseok; Jeon, Sanghun; Kim, Kwangsoo; Lim, Suhwan; Woo, Jongho; Kim, Wanki; Ha, Daewon, et al.

ArticleIssue Date2025CitationIEEE International Reliability Physics Symposium Proceedings, pp 1 - 6

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Browsing by Shin, HunbeomAuthor

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