Multi-Layer SnSe Nanoflake Field-Effect Transistors with Low-Resistance Au Ohmic Contactsopen access
- Authors
- Cho, Sang-Hyeok; Cho, Kwanghee; Park, No-Won; Park, Soonyong; Koh, Jung-Hyuk; Lee, Sang-Kwon
- Issue Date
- May-2017
- Publisher
- SPRINGER
- Keywords
- Tin chalcogenides; Tin monoselenide (SnSe); Carrier screening effect; Field-effect transistors; 2-D materials; Metal work function
- Citation
- NANOSCALE RESEARCH LETTERS, v.12
- Journal Title
- NANOSCALE RESEARCH LETTERS
- Volume
- 12
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/4431
- DOI
- 10.1186/s11671-017-2145-2
- ISSN
- 1556-276X
1556-276X
- Abstract
- We report p-type tin monoselenide (SnSe) single crystals, grown in double-sealed quartz ampoules using a modified Bridgman technique at 920 degrees C. X-ray powder diffraction (XRD) and energy dispersive X-ray spectroscopy (EDX) measurements clearly confirm that the grown SnSe consists of single-crystal SnSe. Electrical transport of multi-layer SnSe nanoflakes, which were prepared by exfoliation from bulk single crystals, was conducted using back-gated field-effect transistor (FET) structures with Au and Ti contacts on SiO2/Si substrates, revealing that multi-layer SnSe nanoflakes exhibit p-type semiconductor characteristics owing to the Sn vacancies on the surfaces of SnSe nanoflakes. In addition, a strong carrier screening effect was observed in 70-90-nm-thick SnSe nanoflake FETs. Furthermore, the effect of the metal contacts to multi-layer SnSe nanoflake-based FETs is also discussed with two different metals, such as Ti/Au and Au contacts.
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Collections - College of Natural Sciences > Department of Physics > 1. Journal Articles
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