High-quality SiNx thin-film growth at 300 & DEG;C using atomic layer deposition with hollow-cathode plasma
- Authors
- Park, Jae Chan; Kim, Dae Hyun; Seok, Tae Jun; Kim, Dae Woong; Ahn, Ji-Hoon; Kim, Woo-Hee; Park, Tae Joo
- Issue Date
- Jul-2023
- Publisher
- Royal Society of Chemistry
- Citation
- Journal of Materials Chemistry C, v.11, no.27, pp 9107 - 9113
- Pages
- 7
- Indexed
- SCIE
SCOPUS
- Journal Title
- Journal of Materials Chemistry C
- Volume
- 11
- Number
- 27
- Start Page
- 9107
- End Page
- 9113
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/113669
- DOI
- 10.1039/d3tc00475a
- ISSN
- 2050-7526
2050-7534
- Abstract
- We report high-quality atomic-layer-deposited SiNx thin films using a novel remote plasma source, hollow cathode plasma (HCP), at a low temperature of 300 & DEG;C. SiNx films using the HCP source show superior properties to those deposited using inductively-coupled plasma (ICP), a conventional remote plasma source. X-Ray photoelectron spectroscopy and Auger electron spectroscopy analyses reveal that the SiNx film grown using the HCP source has a higher N/Si ratio, a lower oxygen impurity concentration, and outstanding oxidation resistance. The wet etch rate of HCP SiNx films is significantly improved compared with that of ICP SiNx films. In addition, the HCP SiNx films exhibit superb electrical properties, such as the dielectric constant, gate leakage current, and dielectric breakdown field.
- Files in This Item
-
Go to Link
- Appears in
Collections - COLLEGE OF ENGINEERING SCIENCES > DEPARTMENT OF MATERIALS SCIENCE AND CHEMICAL ENGINEERING > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.