ScholarWorks@Hanyang University

Browsing by Choi, SeonjunAuthor

All A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
전체 가 나 다 라 마 바 사 아 자 차 카 타 파 하

Showing results 1 to 14 of 14

SCIESCOPUS
A Novel 3D 2TnC FeRAM Architecture and Operation Scheme with Improved Disturbance for High-Bit-Density Dynamic Random-Access MemoryGo to Linkopen access

Lee, Ji-Yeon; Song, Jiho; Choi, Seonjun; Sim, Jae-Min; Song, Yun-Heub

ArticleIssue Date2024CitationElectronics (Basel), v.13, no.22, pp 1 - 11PublisherMDPI AG
SCISCIESCOPUS
A Novel Structure for Improving Erase Performance of Vertical Channel NAND Flash With an Indium-Gallium-Zinc-Oxide ChannelGo to Link

Choi, Seonjun; Kim, Bongsueg; Jeong, Jae Kyeong; Song, Yun Heub

ArticleIssue Date2019CitationIEEE Transactions on Electron Devices, v.66, no.11, pp 4739 - 4744PublisherInstitute of Electrical and Electronics Engineers
SCIESCOPUS
A Novel Structure to Improve the Erase Speed in 3D NAND Flash Memory to Which a Cell-On-Peri (COP) Structure and a Ferroelectric Memory Device Are AppliedGo to Linkopen access

Choi, Seonjun; Jeong, Jae Kyeong; Kang, Myounggon; Song, Yun-heub

ArticleIssue Date2022CitationELECTRONICS, v.11, no.13, pp 1 - 12PublisherMDPI
SCIESCOPUS
An Optimized Device Structure with a Highly Stable Process Using Ferroelectric Memory in 3D NAND Flash Memory Applicationsopen access

Choi, Seonjun; Kang, Myounggon; Jung, Hong-Sik; Kim, Yuri; Song, Yun-Heub

ArticleIssue Date2024CitationElectronics (Basel), v.13, no.5, pp 1 - 11PublisherMDPI AG
SCIESCOPUS
An Optimized Device Structure with Improved Erase Operation within the Indium Gallium Zinc Oxide Channel in Three-Dimensional NAND Flash ApplicationsGo to Linkopen access

Choi, Seonjun; Park, Jin-Seong; Kang, Myounggon; Jung, Hong-sik; Song, Yun-heub; Stathatos, Elias

ArticleIssue Date2024CitationElectronics (Basel), v.13, no.2, pp 1 - 11PublisherMDPI AG
SCISCIESCOPUS
Comparative Study on Performance of IGZO Transistors With Sputtered and Atomic Layer Deposited Channel LayerGo to Link

Cho, Min Hoe; Seol, Hyunju; Song, Aeran; Choi, Seonjun; Song, Yun Heub; Yun, Pil Sang; Chung, Kwun-Bum; Bae, Jong Uk; Park, Kwon-Shik; Jeong, Jae Kyeong

ArticleIssue Date2019CitationIEEE Transactions on Electron Devices, v.66, no.4, pp 1783 - 1788PublisherInstitute of Electrical and Electronics Engineers
SCOPUS
Fast Thermal Quenching on the Ferroelectric Al:HfO2 Thin Film with Record Polarization Density and Flash Memory ApplicationGo to Link

Ku, Boncheol; Choi, Seonjun; Song, Yun Heub; Choi, Changhwan

ArticleIssue Date2020CitationDigest of Technical Papers - Symposium on VLSI Technology, v.2020-June, pp 1 - 2
SCISCIESCOPUSKCI
Increased memory performance of a Pi (I broken vertical bar) gate structure in a 3-D stackable vertical gate NAND flash memoryGo to Link

Choi, Seonjun; Lee, Jeongsu; Lee, Seung-Beck

ArticleIssue Date2013CitationJournal of the Korean Physical Society, v.63, no.2, pp 257 - 262Publisher한국물리학회
SCIESCOPUS
Innovative Structure to Improve Erase Speed in 3-D nand Flash Memory With Cell-on-Peri (COP) AppliedGo to Link

Choi, Seonjun; Choi, Changhwan; Jeong, Jae Kyeong; Song, Yun-Heub

ArticleIssue Date2022CitationIEEE Transactions on Electron Devices, v.69, no.9, pp 4883 - 4888PublisherInstitute of Electrical and Electronics Engineers
SCIESCOPUS
Interface-driven polarization field screening in Hf0.5Zr0.5O2/poly-Si stacks for 3D ferroelectric NAND flash memoryGo to Link

Choi, Seonjun; Bang, Seungho; Namgung, Junseo; Kang, Wooyoung; Jeong, Yu-Jun; Kim, Yeongseo; Bae, Hyeongyeong; An, Chihwan; Jung, Yei Hwan; Chae, Seung Chul, et al.

ArticleIssue Date2026CitationJOURNAL OF ALLOYS AND COMPOUNDS, v.1050, pp 1 - 8PublisherELSEVIER SCIENCE SA
SCISCIESCOPUS
Multi-step ion beam etching of sub-30 nm magnetic tunnel junctions for reducing leakage and MgO barrier damageGo to Link

Chun, Sung-Woo; Kim, Daehong; Kwon, Jihun; Kim, Bongho; Choi, Seonjun; Lee, Seung-Beck

ArticleIssue Date2012CitationJournal of Applied Physics, v.111, no.7, pp 1 - 3PublisherAmerican Institute of Physics
SCISCIESCOPUS
Reduce Cell to Cell Charge Interference by Virtual Ground Inclusion in 3-Dimensional Vertical Gate NAND Flash MemoryGo to Link

Choi, Seonjun; Lee, Joonhyuk; Oh, Seulki; Lee, Seung-Beck

ArticleIssue Date2011CitationJournal of Nanoscience and Nanotechnology, v.11, no.7, pp 5865 - 5869PublisherAmerican Scientific Publishers
SCISCIESCOPUS
Reduced Distribution of Threshold Voltage Shift in Double Layer NiSi2 Nanocrystals for Nano-Floating Gate Memory ApplicationsGo to Link

Choi, Sungjin; Lee, Junhyuk; Kim, Donghyoun; Oh, Seulki; Song, Wangyu; Choi, Seonjun; Choi, Eunsuk; Lee, Seung-Beck

ArticleIssue Date2011CitationJournal of Nanoscience and Nanotechnology, v.11, no.12, pp 10553 - 10556PublisherAmerican Scientific Publishers
SCIESCOPUSKCI
Vertical Channel NAND Flash Structure using DSCG(Double-Side-Control-Gate) to Reduce Cell to Cell InterferenceGo to Link

Choi, Seonjun; Song, Yun Heub

ArticleIssue Date2018CitationJOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, v.18, no.6, pp.714 - 722PublisherIEEK PUBLICATION CENTER
1
CONTACT US

RSS_1.0 RSS_2.0 ATOM_1.0

222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Korea+82-2-2220-1366

COPYRIGHT © 2024 HANYANG UNIVERSITY.

Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.

BROWSE

한국어