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SCIESCOPUS
A Monolithic Ferroelectric-Ionic Duality for Stochastic-Neuromorphic Core IntegrationGo to Link

Han, Changhyeon; Koo, Ryun Han; Song, Minsuk; Cho, Youngchan; Kang, Min-wook; Kim, Jangsaeng; Lee, Jongho; Shin, Wonjun; Kwon, Daewoong

ArticleIssue Date2026CitationADVANCED MATERIALS, v.38, no.12, pp 1 - 13PublisherWILEY-V C H VERLAG GMBH
SCIESCOPUS
A novel observation of negative differential resistance in a standard CMOS transistor and its application to a compact frequency doublerGo to Linkopen access

Kwak, Been; Cho, Youngchan; Han, Changhyeon; Lee, Jongwoo; Kim, Sangwan; Shin, Yunho; Choi, Joonhyeok; Kim, Dongbin; Lee, Seung June; Lee, Seunghoo, et al.

ArticleIssue Date2026CitationMICROSYSTEMS & NANOENGINEERING, v.12, no.1, pp 1 - 14PublisherSPRINGERNATURE
SCIESCOPUS
All-Sputter-Deposited Hf0.5Zr0.5O2 Double-Gate Ferroelectric Thin-Film Transistor With Amorphous Indium-Gallium-Zinc Oxide ChannelGo to Link

Jeong, Soi; Han, Changhyeon; Yim, Jiyong; Kim, Jeonghan; Kwon, Ki Ryun; Kim, Sangwoo; Park, Eun Chan; You, Ji Won; Choi, Rino; Kwon, Daewoong

ArticleIssue Date2023CitationIEEE ELECTRON DEVICE LETTERS, v.44, no.5, pp.749 - 752PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
SCIESCOPUS
Corrigendum to “Effects of oxygen vacancies on ferroelectric characteristics of RF-sputtered Hf0.5Zr0.5O2” [Mater. Sci. Semicond. Process. 160 (2023) 107401] (Materials Science in Semiconductor Processing (2023) 160, (S136980012300094X), (10.1016/j.mssp.2023.107401))Go to Link

Han, Changhyeon; Kwon, Ki Ryun; Kim, Jeonghan; Yim, Jiyong; Kim, Sangwoo; Park, Eun Chan; You, Ji Won; Jeong, Soi; Choi, Rino; Kwon, Daewoong

ArticleIssue Date2023CitationMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, v.160, pp.1 - 1PublisherELSEVIER SCI LTD
SCIESCOPUS
Degradation and Recovery in HZO-Based FeFETs under Hydrogen and Thermal Stress for CMOS IntegrationGo to Link

Han, Changhyeon; Kwak, Been; Yoo, Yelin; Kwak, Sangeun; Kwon, Daewoong

ArticleIssue Date2026CitationACS Applied Electronic Materials, v.8, no.3, pp 1173 - 1180PublisherAmerican Chemical Society
SCIESCOPUS
Effects of Deposition Power and Thermal Treatment on Ferroelectric Properties of Sputtered Hf₀.₅Zr₀.₅O₂Go to Link

Han, Changhyeon; Kwon, Ki Ryun; Yim, Jiyong; Kim, Jeonghan; Kim, Sangwoo; Jeong, Soi; Park, Eun Chan; You, Ji Won; Choi, Rino; Kwon, Daewoong

ArticleIssue Date2024CitationIEEE Transactions on Electron Devices, v.71, no.5, pp 3130 - 3134PublisherInstitute of Electrical and Electronics Engineers
SCIESCOPUS
Effects of oxygen vacancies on ferroelectric characteristics of RF-sputtered Hf0.5Zr0.5O2Go to Link

Han, Changhyeon; Kwon, Ki Ryun; Kim, Jeonghan; Yim, Jiyong; Kim, Sangwoo; Park, Eun Chan; You, Ji Won; Jeong, Soi; Choi, Rino; Kwon, Daewoong

ArticleIssue Date2023CitationMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, v.160, pp.1 - 8PublisherELSEVIER SCI LTD
SCIESCOPUS
Ferroelectric Field-Effect Transistor Synaptic Device With Hafnium-Silicate InterlayerGo to Link

Kim, Sang Woo; Shin, Wonjun; Kim, Munhyeon; Kwon, Ki Ryun; Yim, Jiyong; Kim, Jeonghan; Han, Changhyeon; Jeong, Soi; Park, Eun Chan; You, Ji Won, et al.

ArticleIssue Date2023CitationIEEE Electron Device Letters, v.44, no.12, pp 1955 - 1958PublisherInstitute of Electrical and Electronics Engineers
SCIESCOPUS
In Materia Shaping of Randomness with a Standard Complementary Metal-Oxide-Semiconductor Transistor for Task-Adaptive Entropy GenerationGo to Linkopen access

Kwak, Been; Koo, Ryun-Han; Cho, Youngchan; Han, Changhyeon; Kim, Dongbin; Jeong, Soi; Shin, Yunho; Choi, Joonhyeok; Im, Jiseong; Ko, Jonghyun, et al.

ArticleIssue Date2026CitationADVANCED FUNCTIONAL MATERIALS, v.36, no.23, pp 1 - 14PublisherWILEY-V C H VERLAG GMBH
SCIESCOPUS
Interface-Engineered TiO2 Interlayer for Reliable Hafnia-Based MFMIS FeFETsGo to Linkopen access

Han, Changhyeon; Kwak, Been; Kim, Hyun-min; Yu, Dahye; Kwon, Daewoong

ArticleIssue Date2026CitationADVANCED ELECTRONIC MATERIALS, v.12, no.4, pp 1 - 12PublisherWILEY
SCIESCOPUS
Memory Window Expansion in HfO2-Based FeFETs Through Trap-to-Dipole ConversionGo to Link

Han, Changhyeon; Kwak, Been; Kim, Hyun-Min; Kwak, Sangeun; Kwon, Daewoong

ArticleIssue Date2026CitationIEEE ELECTRON DEVICE LETTERS, v.47, no.5, pp 905 - 908PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
SCIESCOPUS
Optimizing Reliability: Suppressing Wake-Up Effects in Morphotropic Phase Boundary-Engineered Hf x Zr1-x O2 FerroelectricsGo to Link

Han, Changhyeon; Kwak, Been; Choi, Joonhyeok; Jeong, Woojung; Choi, Rino; Kwon, Daewoong

ArticleIssue Date2025CitationACS Applied Electronic Materials, v.7, no.13, pp 6027 - 6032PublisherAMER CHEMICAL SOC
SCIESCOPUS
Physical Reservoir Computing System via Hybrid Ferroelectric-Ionic TransistorsGo to Link

Koo, Ryun-Han; Han, Changhyeon; Yim, Jiyong; Im, Jiseong; Cho, Youngchan; Lee, Jong-Ho; Cheema, Suraj S.; Kim, Jangsaeng; Shin, Wonjun; Kwon, Daewoong

ArticleIssue Date2026CitationADVANCED MATERIALS, v.38, no.2, pp 1 - 12PublisherWILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
SCIESCOPUS
Quantitative Analysis on the Interaction Between Channel Carrier and Remote Trap in HfxZr1-xO2/SiO2 Interface in Ferroelectric Field-Effect-TransistorGo to Linkopen access

Lee, Haneul; Kim, Sujong; Han, Changhyeon; Kim, Haesung; Yang, Hyojin; Park, Sejun; Yun, Sanghyuk; Lee, Yoon Jung; Choi, Sung-Jin; Kim, Dae Hwan, et al.

ArticleIssue Date2026CitationADVANCED ELECTRONIC MATERIALS, v.12, no.2, pp 1 - 10PublisherWILEY
SCIESCOPUS
Repurposing Si CMOS nonidealities for stochastic and analog image processingGo to Linkopen access

Kwak, Been; Koo, Ryun-Han; Han, Changhyeon; Shin, Yunho; Choi, Joonhyeok; Kim, Dongbin; Lee, Jongwoo; Im, Jiseong; Cho, Youngchan; Lee, Jong-Ho, et al.

ArticleIssue Date2026CitationSCIENCE ADVANCES, v.12, no.8, pp 1 - 11PublisherAMER ASSOC ADVANCEMENT SCIENCE
SCIESCOPUS
Structure-modulated phase stability and defect engineering in ferroelectric HfxZr1-xO2 heterostructuresGo to Link

Han, Changhyeon; Kwak, Been; Choi, Joonhyeok; Kwon, Hyucknam; Kwon, Ki-Ryun; Choi, Rino; Kwon, Daewoong

ArticleIssue Date2025CitationMaterials Science in Semiconductor Processing, v.200, pp 1 - 7PublisherPergamon Press
SCIESCOPUS
Structure-modulated phase stability and defect engineering in ferroelectric HfxZr1-xO2 heterostructures(vol 200 ,109995 , 2025)Go to Link

Han, Changhyeon; Kwak, Been; Choi, Joonhyeok; Kwon, Hyucknam; Kwon, Ki-Ryun; Choi, Rino; Kwon, Daewoong

ArticleIssue Date2026CitationMaterials Science in Semiconductor Processing, v.201, pp 1 - 1PublisherELSEVIER SCI LTD
SCIESCOPUS
Synergistic Modulation of Polarization and Leakage Current in MPB-HZO Capacitors via TiO2 InterlayerGo to Linkopen access

Han, Changhyeon; Kwak, Been; Choi, Joonhyeok; Park, Sung-Wook; Yu, Dahye; Song, Minsuk; Choi, Rino; Kwon, Daewoong

ArticleIssue Date2025CitationAdvanced Electronic Materials, v.11, no.18, pp 1 - 9PublisherWILEY
SCIESCOPUS
Tunable coercive voltage and polarization of HZO through field-induced phase transitionsGo to Link

Han, Changhyeon; Kwak, Been; Kwon, Ki-Ryun; Jeong, Soi; Kim, Jeong-Han; Choi, Rino; kwon, Daewoong

ArticleIssue Date2025CitationMaterials Science in Semiconductor Processing, v.195, pp 1 - 7PublisherPergamon Press
SCIESCOPUS
Tunable Ferroelectric Properties of HfO2-Based Oxides: Role of Aluminum Doping and Bottom ElectrodesGo to Link

Han, Changhyeon; Kwon, Ki Ryun; Jeong, Soi; Kwak, Been; Yim, Jiyong; Park, Eun Chan; You, Ji Won; Choi, Rino; Kwon, Daewoong

ArticleIssue Date2025CitationIEEE Transactions on Electron Devices, v.72, no.2, pp 635 - 639PublisherInstitute of Electrical and Electronics Engineers
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