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SCOPUS
Challenges of Atomic-Layer-Deposited Oxide Semiconductor Channels beyond PVD: Material, Devices, and M3D Stacked StructuresGo to Link

Kim, Yoon-Seo; Choi, Su-Hwan; Oh, Hyejin; Hwang, Taewon; Park, Jin-Seong

ArticleIssue Date2025CitationDigest of Technical Papers - SID International Symposium, v.56, no.1, pp 946 - 949
SCIESCOPUS
Engineering metal/oxide interfaces in IGZO thin-film transistors via atomic-layer-grown SiO2 interlayers for improved contact performanceGo to Link

Hwang, Taewon; Lim, So Young; Song, Jeong-Su; Lee, Sangwoo; Park, Jin-Seong

ArticleIssue Date2026CitationAPPLIED SURFACE SCIENCE, v.720, pp 1 - 8PublisherELSEVIER
SCIESCOPUS
Enhanced Device Characteristics of Hybrid-Channel (Poly-Si/IGO) Structures with Ga2O3 and Al2O3 Interlayers by Suppressing Oxidation-Induced Variability for Ultra-High-Density 3D NAND Flash Memory ApplicationsGo to Link

Hwang, Taewon; Shin, Jeongmin; Lim, So Young; Kim, Sohee; Sim, Jae-Min; Choi, Su-Hwan; Noh, Youngji; Kim, Wanki; Ha, Daewon; Park, Jin-Seong, et al.

ArticleIssue Date2026CitationADVANCED FUNCTIONAL MATERIALS, v.36, no.12, pp 1 - 11PublisherWILEY-V C H VERLAG GMBH
SCISCIESCOPUS
Fabrication of cross-linked alginate beads using electrospraying for adenovirus delivery

Park, Hongkwan; Kim, Pyung-Hwan; Hwang, Taewon; Kwon, Oh-Joon; Park, Tae-Joon; Choi, Sung-Wook; Yun, Chae-Ok; Kim, Jung Hyun

ArticleIssue Date2012CitationInternational Journal of Pharmaceutics, v.427, no.2, pp 417 - 425PublisherElsevier BV
SCIESCOPUS
Hydrogen-State-Engineered Oxide Semiconductor Channels Enabling Reliable 2T0C DRAM OperationGo to Linkopen access

Lee, Jun-Yeoub; Hwang, Taewon; Choi, Su-Hwan; Oh, Hye-Jin; Park, Chang-Kyun; Park, Jin-Seong

ArticleIssue Date2026CitationADVANCED ELECTRONIC MATERIALS, v.12, no.11, pp 1 - 9PublisherWILEY
SCOPUS
Interface Engineering for IGZO/Metal Contacts: Reducing Contact Resistivity with SiO2 Inter-Layers Using Cross-Bridge Kelvin Resistor AnalysisGo to Link

Hwang, Taewon; Lim, So-young; Lee, Sangwoo; Park, Jin-seong

ArticleIssue Date2025Citation2025 IEEE International Interconnect Technology Conference (IITC), pp 1 - 3PublisherInstitute of Electrical and Electronics Engineers Inc.
SCIESCOPUS
Oxide Semiconductor for Advanced Memory Architectures: Atomic Layer Deposition, Key Requirement and ChallengesGo to Linkopen access

Lee, Chi-Hoon; Ryu, Seong-Hwan; Hwang, Taewon; Kim, Sang-Hyun; Kim, Yoon-Seo; Park, Jin-Seong

ArticleIssue Date2026CitationNANO-MICRO LETTERS, v.18, no.1, pp 1 - 45PublisherSHANGHAI JIAO TONG UNIV PRESS
SCIESCOPUS
Reduction of trap density in high-k dielectrics through optimized ALD process and high-pressure deuterium annealing

Hwang, Taewon; Choi, Su-Hwan; Song, Ki-Cheol; Lee, Yeonhee; Kwag, Jae-Hyeok; Lee, Jun-Yeoub; Park, Chang-Kyun; Park, Jin-Seong

ArticleIssue Date2025CitationMaterials Science in Semiconductor Processing, v.191, pp 1 - 8PublisherPergamon Press
SCIESCOPUS
Reliability Engineering of High-Mobility IGZO Transistors via Gate Insulator Heterostructures Grown by Atomic Layer DepositionGo to Linkopen access

김윤서; Hwang, Taewon; Oh, Hye-Jin; Park, Joon Seok; 박진성

ArticleIssue Date2024CitationAdvanced Materials Interfaces, v.11, no.15, pp 1 - 8PublisherJohn Wiley and Sons Ltd
SCIESCOPUS
Reliability Improvement of High Mobility Oxide TFTs Based on Hydrogen-Resistant PEALD Al2O3 Gate Insulators Grown with N2O PlasmaGo to Link

Kim, Sang-Hyun; Kim, Yoon-Seo; Hwang, Taewon; Kim, Tae Heon; Koo, Haklim; Park, Joon Seok; Park, Jin-Seong

ArticleIssue Date2025CitationACS Applied Materials & Interfaces, v.17, no.9, pp 14168 - 14178PublisherAmerican Chemical Society
SCIESCOPUS
Tailoring the number of lines for IGO-channel 2T0C DRAM comparable to conventional 2-line operation 1T1C structure for highly scaled cell volumeGo to Linkopen access

Kwag, Jae-Hyeok; Choi, Su-Hwan; Kim, Daejung; Lee, Jun-Yeoub; Hwang, Taewon; Oh, Hye-Jin; Park, Chang-Kyun; Park, Jin-Seong

ArticleIssue Date2025CitationInternational Journal of Extreme Manufacturing, v.7, no.5, pp 1 - 11PublisherIOP Publishing
SCIESCOPUS
Ultra-High Mobility Atomically-Ordered InGaZnO Transistors Through Atomic Layer DepositionGo to Linkopen access

Kim, Yoon-Seo; Kim, Hyeon Woo; Hwang, Taewon; Ahn, Jinho; Cho, Sung Beom; Park, Jin-Seong

ArticleIssue Date2025CitationAdvanced Electronic Materials, v.11, no.15, pp 1 - 10PublisherWiley-VCH Verlag
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