ScholarWorks@Hanyang University: Browsing ScholarWorks

Browsing by Joh, HongraeAuthor

All A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

전체 가 나 다 라 마 바 사 아 자 차 카 타 파 하

Sort by: In order: Results/Page Authors/Record:

Showing results 1 to 9 of 9

SCOPUS

A Highly Reliable Ferroelectric NAND Cell with Ultra-thin IGZO Charge Trap Layer: Trap Profile Engineering for Endurance and Retention Improvement Go to Link

Kang, Hyunjun; Joh, Hongrae; Kwak, Junhyeok; Kim, Giuk; Choi, Hyojun; Kim, Hoon; Park, Sanghyun; Seo, Kwangyou; Kim, Kwangsoo; Kim, Wanki, et al.

ArticleIssue Date2026CitationTechnical Digest - International Electron Devices Meeting, IEDM, pp 1 - 4PublisherInstitute of Electrical and Electronics Engineers Inc.

SCIESCOPUS

A Novel Ferroelectric NAND Cell Structure Featuring Ultrathin IGZO Charge Trap Layer for Superior Endurance and Retention Go to Link

Kang, Hyunjun; Joh, Hongrae; Kwak, Junhyeok; Kim, Giuk; Choi, Hyojun; Kim, Hoon; Park, Sanghyun; Seo, Kwangyou; Kim, Kwangsoo; Kim, Wanki, et al.

ArticleIssue Date2026CitationIEEE TRANSACTIONS ON ELECTRON DEVICES, v.73, no.5, pp 3132 - 3139PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC

SCIESCOPUS

Band Engineering of Gate Interlayer for Low-voltage Operation and Enhanced Reliability in Gate-injection Type FeFETs Go to Link

Kim, Hoon; Kim, Giuk; Choi, Hyojun; Joh, Hongrae; Kang, Hyunjun; Park, Sanghyun; Seo, Kwangyou; Kim, Kwangsoo; Kim, Wanki; Ha, Daewon, et al.

ArticleIssue Date2026CitationIEEE ELECTRON DEVICE LETTERS, v.47, no.4, pp 728 - 731PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC

SCOPUS

Decoupling and Quantifying Polarization and Trap Charges in MIFIS FeNAND: Insights into Charge Dynamics and Reliability Go to Link

Joh, Hongrae; Kang, Hyunjun; Kwak, Junhyeok; Kim, Giuk; Choi, Hyojun; Kim, Hoon; Park, Sanghyun; Seo, Kwangyou; Kim, Kwangsoo; Kim, Wanki, et al.

ArticleIssue Date2026Citation2025 IEEE International Electron Devices Meeting (IEDM), pp 1 - 4PublisherIEEE

SCIESCOPUS

Dual-port ferroelectric NAND flash memory for large memory window, QLC programmable and disturbance-free operations Go to Link

Joh, Hongrae; Lee, Sangho; Ahn, Jinho; Jeon, Sanghun

ArticleIssue Date2024CitationJournal of Materials Chemistry C, v.12, no.38, pp 15435 - 15443PublisherRoyal Society of Chemistry

SCIESCOPUS

Monolithically Integrated Complementary Ferroelectric FET XNOR Synapse for the Binary Neural Network Go to Link

Hwang, Junghyeon; Joh, Hongrae; Kim, Chaeheon; Ahn, Jinho; Jeon, Sanghun

ArticleIssue Date2024CitationACS Applied Materials & Interfaces, v.16, no.2, pp 2467 - 2476PublisherAmerican Chemical Society

SCOPUS

Oxide Channel Ferroelectric NAND Device with Source-tied Covering Metal Structure: Wide Memory Window (14.3 V), Reliable Retention (> 10 years) and Disturbance Immunity (ΔVth ≤ 0.1 V) for QLC Operation Go to Link

Joh, Hongrae; Kim, Giuk; Ock, Jihye; Kim, Seungyeob; Lee, Sangmok; Lee, Sangho; Kim, Kwangsoo; Lim, Suhwan; Woo, Jongho; Kim, Wanki, et al.

ArticleIssue Date2025CitationTechnical Digest - International Electron Devices Meeting, pp 1 - 4

SCIESCOPUS

The Effect of Ferroelectric/Dielectric Capacitance Ratio on Short-Term Retention Characteristics of MFMIS FeFET Go to Link open access

Hwang, Junghyeon; Kim, Giuk; Joh, Hongrae; Ahn, Jinho; Jeon, Sanghun

ArticleIssue Date2024CitationIEEE Journal of the Electron Devices Society, v.12, pp 988 - 992PublisherInstitute of Electrical and Electronics Engineers Inc.

SCOPUS

Ultrathin-Mo-Enabled NC-NAND with Sub-3.5nm HZO for Scalable High-MW Operation Go to Link

Lee, Sangho; Kim, Yongsu; Jung, Yangjin; Chang, Seungyeon; Shin, Seokjoong; Kim, Giuk; Joh, Hongrae; Kim, Woongin; Park, Sanghyun; Seo, Kwangyou, et al.

ArticleIssue Date2026Citation2025 IEEE International Electron Devices Meeting (IEDM), pp 1 - 4PublisherInstitute of Electrical and Electronics Engineers Inc.

RSS_1.0 RSS_2.0 ATOM_1.0

222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Korea+82-2-2220-1366

Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.

Browsing by Joh, HongraeAuthor

BROWSE