ScholarWorks@Hanyang University: 2. Conference Papers

2. Conference Papers(서울 공과대학 > 서울 신소재공학부 > 2. Conference Papers)4,848

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Collection's Items (Sorted by Submit Date in Descending order): 1501 to 1520 of 4848

MOCVD를 이용하여 증착시킨 Hafnium oxide 박막의 전기적 특성연구

ConferenceIssue Date2002Place배재대학교

Capacitor 전극용 Ru박막의 식각 특성

ConferenceIssue Date2002Place배재대학교

ALD로 증착시킨 HfO2/SiON 게이트 유전물질의 특성

ConferenceIssue Date2002Place배재대학교

0.15um이하 게이트 전극용 건식식각에 관한 연구

ConferenceIssue Date2002Place배재대학교

W-CuO 혼합물을 이용해 제조된 W-15wt%Cu 나노복합분말의 고상소결거동

김영도

ConferenceIssue Date2002Place한국기계연구원

Atomic Layer Deposition of HfO2/Al2O3 Laminate Structure for Gate Dielectric Applications

전형탁

ConferenceIssue Date2002PlaceColorado Convention Center Denver, Colorado

Characteristics of the Polymer formed on via Sidewall during RIE Process and its Removal

전형탁

ConferenceIssue Date2002PlaceColorado Convention Center Denver, Colorado

Characteristics of TiN Films Deposited by rf Remote Plasma Enhanced Atomic Layer Deposition (ALD) Method using Metal Organic Precursor

전형탁

ConferenceIssue Date2002PlaceColorado Convention Center Denver, Colorado

Nano-structured multilayers for improved EUV reflection

ConferenceIssue Date2002PlaceToyonaka, Osaka, Japan

Enhancement of EUV Reflective Multilayer Properties by the Insertion of Ru Barrier Layer

ConferenceIssue Date2002PlaceTokyo

Mo/Si 다층박막의 반사도에 영향을 미치는 인자 연구

ConferenceIssue Date2002Place아주대

ECR 플라즈마를 이용한 Ru 박막의 식각특성

ConferenceIssue Date2002Place아주대

Characterization of Hf02/SiON stack structure for gate dielectrics

ConferenceIssue Date2002Place아주대

Molecular dynamics study for deposition behavior of magnetic materials

ConferenceIssue Date2002PlaceTampa, Florida, USA

Characteristics of TiN films deposited by plasma enhanced atomic layer deposition (PEALD) method

전형탁

ConferenceIssue Date2002PlaceHanyang University, Seoul, Korea

Circle Set Voronoi Diagram for Analysis of Spatial Properties for Ceramic Powder

ConferenceIssue Date2002PlaceHanyang University

Electrical Characteristics of Ir/Atomic Layer Deposited ZrO2/Si field effect transistors

전형탁

ConferenceIssue Date2002PlaceHynes Convention Center & Sheraton Boston Hotel and Towers , Boston Massachusetts

Thermally stable CVD HfOxNy advanced gate dielectrics with poly-Si gate electrode

ConferenceIssue Date2002PlaceSan Francisco, USA

Characteristics of ZrO2 and HfO2 Gate Oxides Deposited by Atomic Layer Deposition (ALD) Using Metal Organic Precursors with Various Reactant Gas Sources

전형탁

ConferenceIssue Date2002PlaceColorado Convention Center, Denver, Colorado

Gated field emitter using carbon nanotubes for vacuum microelectronic devices

ConferenceIssue Date2003PlaceKyoto

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