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2. Conference Papers(서울 공과대학 > 서울 신소재공학부 > 2. Conference Papers)4,848

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Collection's Items (Sorted by Submit Date in Descending order): 3621 to 3640 of 4848

Low Temperature Silicon Nitride ALD

전형탁

ConferenceIssue Date2015PlacePortland Hilton
Interfacial Layer Scavenging Induced by Metal Electrodes for Metal/HfO2/Ge capacitors

안진호

ConferenceIssue Date2015PlaceUSA
Preparation and Characterization of Nanostructured Li2S-VGCF Composite for All-Solid-State Battery via Solution-Based Process

신동욱

ConferenceIssue Date2015PlaceSuntec Singapore
Physical Characteristics of ALD SnS2

전형탁

ConferenceIssue Date2015PlaceCoex, Seoul Korea
Role of Anisotropic Strain in the Oxygen Transport of La0.875Sr0.125CoO3-δ Perovskites

정용재

ConferenceIssue Date2015PlaceCOEX
자성재료의 이해 및 응용

김영도

ConferenceIssue Date2015PlaceHIT 310호
The snowball structured cathode for performance improvement of fuel cell

신동욱

ConferenceIssue Date2015PlaceAveiro-Portugal
Engineered Nano Structure for Advanced Nano Lithography

안진호

ConferenceIssue Date2015Place부산 BEXCO
Comparative studies of ZnON and ZnO thin film transistors fabricated by DC reactive sputtering method

박진성

ConferenceIssue Date2015PlaceSan Jose Convention Center, San Jose, California
DC reactive sputtering을 이용한 고이동도, 고신뢰성의 a-ZnON TFTs 연구

박진성

ConferenceIssue Date2015Place제주 라마다호텔
Low Gate Leakage Current and Interface State Density of ALD Al2O3 SiC MOS Device with NH3 Plasma Treatment

최창환

ConferenceIssue Date2015PlaceRamada Plaza Jeju
Kesterite Cu2ZnSnS4 (CZTS) Thin Film Formation Using Sequential Annealing Process Under N2 and H2S Atmosphere

최창환

ConferenceIssue Date2015PlaceLamada Plaza Jeju
Synthesis of P-type ZnO Thin Film with As Doping and Post Annealing

최창환

ConferenceIssue Date2015PlaceLamada Plaza Jeju
Thermoelectric Properties of Multi-stack Al Doped ZnO Layer Structure Using Atomic Layer Deposition

박진성

ConferenceIssue Date2015PlacePotland, Oregon USA
Highly Flexible Hybrid-layers Embedded with ALD Al2O3 and Graphene Oxide for Improved Gas Barrier

박진성

ConferenceIssue Date2015PlacePortland, Oregon USA
The Effects of (NH4)Sx Treatment on n-GaN MOS Device with Nano-Laminated ALD HfAlOx and Ru Gate Stack

최창환

ConferenceIssue Date2015PlaceUdine, Italy
Electrical Characteristics of ALD La2O3 Capping Layers Using Different Lanthanum Precursors in MOS Devices with ALD HfO2, HfSiOx, and HfSiON Gate Dielectrics

최창환

ConferenceIssue Date2015PlaceUdine, Italy
Remote Plasma Atomic Layer Deposited Al2O3 4H SiC MOS Capacitor with H2 Plasma Passivation and Post Metallization Annealing

최창환

ConferenceIssue Date2015PlaceUdine, Italy
ALD of Maganese Silicate

박진성

ConferenceIssue Date2015PlacePotland, Oregon USA
Functionalizing branched nanowires with metal nanoparticles for enhanced gas sensing

김현우

ConferenceIssue Date2015PlacePorto Palace Conference Centre & Hotel, Thessaloniki, Greece
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