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SCIESCOPUS
A Novel 3D 2TnC FeRAM Architecture and Operation Scheme with Improved Disturbance for High-Bit-Density Dynamic Random-Access MemoryGo to Linkopen access

Lee, Ji-Yeon; Song, Jiho; Choi, Seonjun; Sim, Jae-Min; Song, Yun-Heub

ArticleIssue Date2024CitationElectronics (Basel), v.13, no.22, pp 1 - 11PublisherMDPI AG
SCOPUS
A Novel 3D Gate-All-Around Vertical FeFET with Back-Gate Structure for Disturbance-Less Program Operation

Ku, Boncheol; Sim, Jae-Min; Hur, Jae Seok; Jeong, Jae Kyeong; Song, Yun-Heub; Choi, Changhwan

ArticleIssue Date2024Citation2024 IEEE International Memory Workshop, IMW 2024 - Proceedings, pp 1 - 4PublisherInstitute of Electrical and Electronics Engineers Inc.
SCIESCOPUS
A Novel Program Operation Scheme With Negative Bias in 3-D nand Flash MemoryGo to Link

Sim, Jae-Min; Kang, Myounggon; Song, Yun-Heub

ArticleIssue Date2021CitationIEEE Transactions on Electron Devices, v.68, no.12, pp 6112 - 6117PublisherInstitute of Electrical and Electronics Engineers
SCIESCOPUS
A String-Select-Line Separation Patterning Scheme for Low Voltage and High-Speed Program Operation in 3D NAND Flash Memory with Separated Source-LineGo to Linkopen access

Sim, Jae-Min; Kim, Hakyeong; Song, Yun-Heub

ArticleIssue Date2024CitationIEEE Access, v.12, pp 170699 - 170706PublisherInstitute of Electrical and Electronics Engineers Inc.
SCIESCOPUS
Aspect ratio-dependent leaning of a block array in 3D NAND flash memoryGo to Link

Kim, Beomsu; Yoon, Dong-Gwan; Sim, Jae-Min; Song, Yun-Heub

ArticleIssue Date2024CitationMicroelectronics and Reliability, v.158, pp 1 - 5PublisherElsevier Ltd
SCOPUS
Asymmetric Read Bias for Alleviating Cell-to-Cell Interference in 3D NAND Flash MemoryGo to Link

Sim, Jae-Min; Song, Yun-Heub

ArticleIssue Date2021CitationTENSYMP 2021 - 2021 IEEE Region 10 Symposium, pp.1 - 4PublisherInstitute of Electrical and Electronics Engineers Inc.
SCIESCOPUS
Concave and Convex Structures for Advanced 3-D NAND Flash Memory TechnologyGo to Link

Song, Jiho; Sim, Jae-Min; Kim, Beomsu; Song, Yun-Heub

ArticleIssue Date2024CitationIEEE Transactions on Electron Devices, pp 1 - 5PublisherInstitute of Electrical and Electronics Engineers
SCIESCOPUS
Enhanced Device Characteristics of Hybrid-Channel (Poly-Si/IGO) Structures with Ga2O3 and Al2O3 Interlayers by Suppressing Oxidation-Induced Variability for Ultra-High-Density 3D NAND Flash Memory ApplicationsGo to Link

Hwang, Taewon; Shin, Jeongmin; Lim, So Young; Kim, Sohee; Sim, Jae-Min; Choi, Su-Hwan; Noh, Youngji; Kim, Wanki; Ha, Daewon; Park, Jin-Seong, et al.

ArticleIssue Date2026CitationADVANCED FUNCTIONAL MATERIALS, v.36, no.12, pp 1 - 11PublisherWILEY-V C H VERLAG GMBH
SCIESCOPUS
High Mobility and GIDL Erase-Compatible Characteristics in Hybrid Channel (Poly-Si/IGO) for Ultrahigh 3D NAND Flash Memory ApplicationsGo to Link

Sim, Jae-Min; Choi, Su-Hwan; Ryu, Seong-Hwan; Song, Ji-Ho; Park, Jin-Seong; Song, Yun-Heub

ArticleIssue Date2024CitationACS Applied Electronic Materials, v.6, no.2, pp 1087 - 1093PublisherAMER CHEMICAL SOC
SCIESCOPUS
Impact of Residual Stress on a Polysilicon Channel in Scaled 3D NAND Flash MemoryGo to Linkopen access

Lee, Juyoung; Yoon, Dong-Gwan; Sim, Jae-Min; Song, Yun-Heub

ArticleIssue Date2021CitationELECTRONICS, v.10, no.21, pp.1 - 6PublisherMDPI
SCISCIESCOPUS
Investigation of the Impact of External Stress on Memory Characteristics by Modifying the Backside of SubstrateGo to Link

Oh, Young-Taek; Sim, Jae-Min; Nguyen Van Toan; Kino, Hisashi; Ono, Takahito; Tanaka, Tetsu; Song, Yun Heub

ArticleIssue Date2019CitationIEEE Transactions on Electron Devices, v.66, no.4, pp 1741 - 1746PublisherInstitute of Electrical and Electronics Engineers
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