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A Highly Reliable Ferroelectric NAND Cell with Ultra-thin IGZO Charge Trap Layer: Trap Profile Engineering for Endurance and Retention Improvement Go to Link

Kang, Hyunjun; Joh, Hongrae; Kwak, Junhyeok; Kim, Giuk; Choi, Hyojun; Kim, Hoon; Park, Sanghyun; Seo, Kwangyou; Kim, Kwangsoo; Kim, Wanki, et al.

ArticleIssue Date2026CitationTechnical Digest - International Electron Devices Meeting, IEDM, pp 1 - 4PublisherInstitute of Electrical and Electronics Engineers Inc.

SCIESCOPUS

A Novel Ferroelectric NAND Cell Structure Featuring Ultrathin IGZO Charge Trap Layer for Superior Endurance and Retention Go to Link

Kang, Hyunjun; Joh, Hongrae; Kwak, Junhyeok; Kim, Giuk; Choi, Hyojun; Kim, Hoon; Park, Sanghyun; Seo, Kwangyou; Kim, Kwangsoo; Kim, Wanki, et al.

ArticleIssue Date2026CitationIEEE TRANSACTIONS ON ELECTRON DEVICES, v.73, no.5, pp 3132 - 3139PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC

SCIESCOPUS

Band Engineering of Gate Interlayer for Low-voltage Operation and Enhanced Reliability in Gate-injection Type FeFETs Go to Link

Kim, Hoon; Kim, Giuk; Choi, Hyojun; Joh, Hongrae; Kang, Hyunjun; Park, Sanghyun; Seo, Kwangyou; Kim, Kwangsoo; Kim, Wanki; Ha, Daewon, et al.

ArticleIssue Date2026CitationIEEE ELECTRON DEVICE LETTERS, v.47, no.4, pp 728 - 731PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC

SCOPUS

Decoupling and Quantifying Polarization and Trap Charges in MIFIS FeNAND: Insights into Charge Dynamics and Reliability Go to Link

Joh, Hongrae; Kang, Hyunjun; Kwak, Junhyeok; Kim, Giuk; Choi, Hyojun; Kim, Hoon; Park, Sanghyun; Seo, Kwangyou; Kim, Kwangsoo; Kim, Wanki, et al.

ArticleIssue Date2026Citation2025 IEEE International Electron Devices Meeting (IEDM), pp 1 - 4PublisherIEEE

SCIESCOPUS

Enhancing Program Speed and Diminishing Read After Write Delay by Metal Work Function Engineering Go to Link

Shin, Seokjoong; Kim, Giuk; Choi, Hyojun; Park, Sanghyun; Seo, Kwangyou; Kim, Kwangsoo; Kim, Wanki; Ha, Daewon; Ahn, Jinho; Jeon, Sanghun

ArticleIssue Date2025CitationIEEE Electron Device Letters, v.46, no.8, pp 1433 - 1436PublisherInstitute of Electrical and Electronics Engineers

SCIESCOPUS

Experimental Analysis and Mathematical Modeling of Program Efficiency in Gate-Side Injection Type FeFETs Depending on the Gate Interlayer Go to Link

Kim, Giuk; Kim, Taeho; Choi, Hyojun; Shin, Seokjoong; Kim, Hoon; Park, Sanghyun; Seo, Kwangyou; Kim, Kwangsoo; Kim, Wanki; Ha, Daewon, et al.

ArticleIssue Date2025CitationIEEE Transactions on Electron Devices, v.72, no.9, pp 4896 - 4901PublisherInstitute of Electrical and Electronics Engineers

SCOPUS

Exploring FeFET Degradation Mechanisms: Mid-Interlayer as a Viable Solution for Stable Retention, Disturb Immunity, and Low Vth Variation Go to Link

Kim, Giuk; Lee, Sangho; Choi, Hyojun; Kim, Hoon; Shin, Seokjoong; Park, Sanghyun; Seo, Kwangyou; Kim, Kwangsoo; Kim, Wanki; Ahn, Jinho, et al.

ArticleIssue Date2025CitationDigest of Technical Papers - Symposium on VLSI Technology, pp 1 - 3

SCIESCOPUS

Middle Interlayer Engineered Ferroelectric NAND Flash Overcoming Reliability and Stability Bottlenecks for Next-Generation High-Density Storage Systems Go to Link open access

Kim, Giuk; Lee, Sangho; Choi, Hyojun; Jung, Yangjin; Kim, Woongjin; Park, Sanghyun; Seo, Kwangyou; Kim, Kwangsoo; Kim, Wanki; Ha, Daewon, et al.

ArticleIssue Date2025CitationADVANCED SCIENCE, v.12, no.40, pp 1 - 16PublisherWILEY

SCIESCOPUS

Stabilized negative capacitance for near-theoretical efficiency and high reliability in charge trap flash memory Go to Link

Lee, Sangho; Kim, Giuk; Nam, Yunseok; Jeong, Yangjin; Kang, Hyunjun; Kim, Woongjin; Shin, Hunbeom; Shin, Mincheol; Park, Sanghyun; Seo, Kwangyou, et al.

ArticleIssue Date2025CitationMaterials Today Physics, v.58, pp 1 - 10PublisherELSEVIER SCIENCE BV

SCOPUS

Ultrathin-Mo-Enabled NC-NAND with Sub-3.5nm HZO for Scalable High-MW Operation Go to Link

Lee, Sangho; Kim, Yongsu; Jung, Yangjin; Chang, Seungyeon; Shin, Seokjoong; Kim, Giuk; Joh, Hongrae; Kim, Woongin; Park, Sanghyun; Seo, Kwangyou, et al.

ArticleIssue Date2026Citation2025 IEEE International Electron Devices Meeting (IEDM), pp 1 - 4PublisherInstitute of Electrical and Electronics Engineers Inc.

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