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A Highly Reliable Ferroelectric NAND Cell with Ultra-thin IGZO Charge Trap Layer: Trap Profile Engineering for Endurance and Retention Improvement Go to Link

Kang, Hyunjun; Joh, Hongrae; Kwak, Junhyeok; Kim, Giuk; Choi, Hyojun; Kim, Hoon; Park, Sanghyun; Seo, Kwangyou; Kim, Kwangsoo; Kim, Wanki, et al.

ArticleIssue Date2026CitationTechnical Digest - International Electron Devices Meeting, IEDM, pp 1 - 4PublisherInstitute of Electrical and Electronics Engineers Inc.

SCIESCOPUS

A Novel Ferroelectric NAND Cell Structure Featuring Ultrathin IGZO Charge Trap Layer for Superior Endurance and Retention Go to Link

Kang, Hyunjun; Joh, Hongrae; Kwak, Junhyeok; Kim, Giuk; Choi, Hyojun; Kim, Hoon; Park, Sanghyun; Seo, Kwangyou; Kim, Kwangsoo; Kim, Wanki, et al.

ArticleIssue Date2026CitationIEEE TRANSACTIONS ON ELECTRON DEVICES, v.73, no.5, pp 3132 - 3139PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC

SCIESCOPUS

Band Engineering of Gate Interlayer for Low-voltage Operation and Enhanced Reliability in Gate-injection Type FeFETs Go to Link

Kim, Hoon; Kim, Giuk; Choi, Hyojun; Joh, Hongrae; Kang, Hyunjun; Park, Sanghyun; Seo, Kwangyou; Kim, Kwangsoo; Kim, Wanki; Ha, Daewon, et al.

ArticleIssue Date2026CitationIEEE ELECTRON DEVICE LETTERS, v.47, no.4, pp 728 - 731PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC

SCOPUS

Decoupling and Quantifying Polarization and Trap Charges in MIFIS FeNAND: Insights into Charge Dynamics and Reliability Go to Link

Joh, Hongrae; Kang, Hyunjun; Kwak, Junhyeok; Kim, Giuk; Choi, Hyojun; Kim, Hoon; Park, Sanghyun; Seo, Kwangyou; Kim, Kwangsoo; Kim, Wanki, et al.

ArticleIssue Date2026Citation2025 IEEE International Electron Devices Meeting (IEDM), pp 1 - 4PublisherIEEE

SCOPUS

Design Methodology for Low-Voltage Operational (≤1 V) FRAM Cell Capacitors and Approaches for Overcoming Disturb Issues in 1T-nC Arrays: Experimental & Modeling Go to Link

Lee, Sangho; Kim, Giuk; Kim, Chaeheon; Jung, Yangjin; Hwang, Jeonghyun; Nam, Yunseok; Shin, Mincheol; Goh, Youngin; Ryu, Mintae; Suh, Jihye, et al.

ArticleIssue Date2025CitationTechnical Digest - International Electron Devices Meeting, pp 1 - 4

SCIESCOPUS

Enhancement of performance and reliability in MOSFETs via high-pressure microwave annealing Go to Link

Kang, Geonhyeong; Shin, Hunbeom; Kim, Seungyeob; Zhang, Lingwei; Kim, Giuk; Lee, Sujeong; Nam, Yunseok; Kim, Chaeheon; Kim, Hoon; Ahn, Jinho, et al.

ArticleIssue Date2025CitationJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, v.43, no.1, pp 1 - 6PublisherAmerican Institute of Physics

SCIESCOPUS

Enhancing Program Speed and Diminishing Read After Write Delay by Metal Work Function Engineering Go to Link

Shin, Seokjoong; Kim, Giuk; Choi, Hyojun; Park, Sanghyun; Seo, Kwangyou; Kim, Kwangsoo; Kim, Wanki; Ha, Daewon; Ahn, Jinho; Jeon, Sanghun

ArticleIssue Date2025CitationIEEE Electron Device Letters, v.46, no.8, pp 1433 - 1436PublisherInstitute of Electrical and Electronics Engineers

SCIESCOPUS

Experimental Analysis and Mathematical Modeling of Program Efficiency in Gate-Side Injection Type FeFETs Depending on the Gate Interlayer Go to Link

Kim, Giuk; Kim, Taeho; Choi, Hyojun; Shin, Seokjoong; Kim, Hoon; Park, Sanghyun; Seo, Kwangyou; Kim, Kwangsoo; Kim, Wanki; Ha, Daewon, et al.

ArticleIssue Date2025CitationIEEE Transactions on Electron Devices, v.72, no.9, pp 4896 - 4901PublisherInstitute of Electrical and Electronics Engineers

SCIESCOPUS

Experimental Analysis on the Interaction Between Interface Trap Charges and Polarization on the Memory Window of Metal-Ferroelectric-Insulator-Si (MFIS) FeFET Go to Link

Kim, Giuk; Choi, Hyojun; Lee, Sangho; Shin, Hunbeom; Lee, Sangmok; Nam, Yunseok; Kang, Hyunjun; Shin, Seokjoong; Kim, Hoon; Lim, Youngjin, et al.

ArticleIssue Date2024CitationIEEE TRANSACTIONS ON ELECTRON DEVICES, v.71, no.11, pp 6627 - 6632PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC

SCOPUS

Exploring FeFET Degradation Mechanisms: Mid-Interlayer as a Viable Solution for Stable Retention, Disturb Immunity, and Low Vth Variation Go to Link

Kim, Giuk; Lee, Sangho; Choi, Hyojun; Kim, Hoon; Shin, Seokjoong; Park, Sanghyun; Seo, Kwangyou; Kim, Kwangsoo; Kim, Wanki; Ahn, Jinho, et al.

ArticleIssue Date2025CitationDigest of Technical Papers - Symposium on VLSI Technology, pp 1 - 3

SCIESCOPUS

First Demonstration of Thermally Stable Zr:HfO2 Ferroelectrics Via Inserting AlN Interlayer Go to Link

Lee, Sangmok; Kim, Giuk; Lee, Sangho; Shin, Hunbeom; Lim, Youngjin; Kim, Kang; Kim, Do-Hyung; Oh, Il-Kwon; Ko Park, Sang-Hee; Ahn, Jinho, et al.

ArticleIssue Date2024CitationIEEE ELECTRON DEVICE LETTERS, v.45, no.9, pp 1578 - 1581PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS IN

SCIESCOPUS

Imprinted Antiferroelectric with Low Damage Process for High Performance Negative Capacitance NAND Flash Memory Go to Link

Lee, Sangho; Kim, Giuk; Nam, Yunseok; Jeong, Yeongseok; Kim, Taeho; Shin, Hunbeom; Lee, Sangmok; Ahn, Jinho; Jeon, Sanghun

ArticleIssue Date2025CitationIEEE Electron Device Letters, v.46, no.4, pp 572 - 575PublisherInstitute of Electrical and Electronics Engineers

SCOPUS

In-depth Analysis of the Hafnia Ferroelectrics as a Key Enabler for Low Voltage & QLC 3D VNAND beyond 1K Layers: Experimental Demonstration and Modeling Go to Link

Kim, Giuk; Choi, Hyojun; Shin, Hunbeom; Lee, Sangho; Lee, Sangmok; Nam, Yunseok; Jung, Minhyun; Myeong, Ilho; Kim, Kijoon; Woo, Jongho, et al.

ArticleIssue Date2024CitationDigest of Technical Papers - Symposium on VLSI Technology, pp 1 - 2

SCIESCOPUS

Kinetically Stabilized Hafnia Ferroelectric of Al-Doped HfO2 Film by Fast Ramping and Fast Cooling Process Go to Link

Zhang, Lingwei; Kim, Giuk; Lee, Sangho; Shin, Hunbeom; Lim, Youngjin; Kim, Kang; Oh, Il-Kwon; Park, Sang-Hee Ko; Ahn, Jinho; Jeon, Sanghun

ArticleIssue Date2024CitationIEEE Transactions on Electron Devices, v.71, no.12, pp 7398 - 7404PublisherInstitute of Electrical and Electronics Engineers

SCOPUS

Low-Damage Processed and High-Pressure Annealed High-k Hafnium Zirconium Oxide Capacitors near Morphotropic Phase Boundary with Record-Low EOT of 2.4Å & high-k of 70 for DRAM Technology

Gaddam, Venkateswarlu; Hwang, Junghyeon; Shin, Hunbeom; Kim, Chaeheon; Kim, Giuk; Kim, Hyung-Jun; Lee, Jooho; Kim, Hyun-Cheol; Park, Bumsu; Lim, Suhwan, et al.

ArticleIssue Date2024CitationDigest of Technical Papers - Symposium on VLSI Technology, pp 1 - 2

SCIESCOPUS

Low-Temperature (450 °C) Crystallization of Al:HfO2 Ferroelectric Thin Films Enabled by Microwave Annealing Process Go to Link

Kim, Giuk; Zhang, Lingwei; Lee, Sangho; Shin, Hunbeom; Lim, Youngjin; Kim, Kang; Oh, Il-Kwon; Park, Sang-Hee Ko; Ahn, Jinho; Jeon, Sanghun

ArticleIssue Date2025CitationIEEE Transactions on Electron Devices, v.72, no.10, pp 5538 - 5543PublisherInstitute of Electrical and Electronics Engineers

SCIESCOPUS

Middle Interlayer Engineered Ferroelectric NAND Flash Overcoming Reliability and Stability Bottlenecks for Next-Generation High-Density Storage Systems Go to Link open access

Kim, Giuk; Lee, Sangho; Choi, Hyojun; Jung, Yangjin; Kim, Woongjin; Park, Sanghyun; Seo, Kwangyou; Kim, Kwangsoo; Kim, Wanki; Ha, Daewon, et al.

ArticleIssue Date2025CitationADVANCED SCIENCE, v.12, no.40, pp 1 - 16PublisherWILEY

SCIESCOPUS

Novel strategies for low-voltage NAND flash memory with negative capacitance effect

Kim, Giuk; Kim, Taeho; Lee, Sangho; Hwang, Junghyeon; Jung, Minhyun; Ahn, Jinho; Jeon, Sanghun

ArticleIssue Date2024CitationJapanese Journal of Applied Physics, v.63, no.5, pp 1 - 5PublisherIOP Publishing Ltd

SCIESCOPUS

Optimizing De-trap Pulses in Gate-injection Type Ferroelectric NAND Cells to Minimize Read After Write Delay Issue Go to Link

Kim, Giuk; Choi, Hyojun; Cho, Hongrae; Lee, Sangho; Shin, Hunbeom; Kang, Hyunjun; Kim, Hoon; Shin, Seokjoong; Park, Seonjae; Kwon, Sunseong, et al.

ArticleIssue Date2024CitationIEEE Electron Device Letters, v.45, no.12, pp 2359 - 2362PublisherInstitute of Electrical and Electronics Engineers

SCOPUS

Oxide Channel Ferroelectric NAND Device with Source-tied Covering Metal Structure: Wide Memory Window (14.3 V), Reliable Retention (> 10 years) and Disturbance Immunity (ΔVth ≤ 0.1 V) for QLC Operation Go to Link

Joh, Hongrae; Kim, Giuk; Ock, Jihye; Kim, Seungyeob; Lee, Sangmok; Lee, Sangho; Kim, Kwangsoo; Lim, Suhwan; Woo, Jongho; Kim, Wanki, et al.

ArticleIssue Date2025CitationTechnical Digest - International Electron Devices Meeting, pp 1 - 4

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Browsing by Kim, GiukAuthor

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