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Technical Digest - International Electron Devices Meeting

Journal Title

  • Technical Digest - International Electron Devices Meeting

ISSN

  • 0163-1918

Publisher

Listed on(Coverage)

SJR 1999-2017;2019
CiteScore 2011-2019
SCOPUS 2017-2020

Active

  • Active

    based on the information

    • CITESCORE;

Article List

1 - 14 out of 14 results.

SCOPUS
CMOS-Compatible Oxide TFT-Based 2T-2C Near-Pixel Analog Compute Cell with ADC/DAC-Free Sensor Interface for Energy-Efficient Feature ExtractionGo to Link

Park, Seonjae; Kim, Seungyeob; Cheon, Seungmin; Jung, Taeseung; Ahn, Jinho; Jeon, Sanghun

ArticleIssue Date2026Citation2025 IEEE International Electron Devices Meeting (IEDM), pp 1 - 4PublisherInstitute of Electrical and Electronics Engineers Inc.
SCOPUS
First Hardware Demonstration of Fully Integrated Hafnia-based Multimodal Neuromorphic Computing PlatformGo to Link

Park, Eun Chan; Song, Minsuk; Kim, Jangsaeng; Lee, Jongwoo; Koo, Ryun-Han; Im, Jiseong; Shin, Wonjun; Kwon, Daewoong

ArticleIssue Date2026Citation2025 IEEE International Electron Devices Meeting (IEDM), pp 1 - 4PublisherInstitute of Electrical and Electronics Engineers Inc.
SCOPUS
Ferroelectric Memcapacitor Crossbar Array with NAND Flash Structure for In-Memory ComputingGo to Link

Hwang, Hwiho; Yu, Junsu; Youn, Sangwook; Kim, Hyungjin

ArticleIssue Date2026Citation2025 IEEE International Electron Devices Meeting (IEDM), pp 1 - 4PublisherInstitute of Electrical and Electronics Engineers Inc.
SCOPUS
A Highly Reliable Ferroelectric NAND Cell with Ultra-thin IGZO Charge Trap Layer: Trap Profile Engineering for Endurance and Retention ImprovementGo to Link

Kang, Hyunjun; Joh, Hongrae; Kwak, Junhyeok; Kim, Giuk; Choi, Hyojun; Kim, Hoon; Park, Sanghyun; Seo, Kwangyou; Kim, Kwangsoo; Kim, Wanki, et al.

ArticleIssue Date2026CitationTechnical Digest - International Electron Devices Meeting, IEDM, pp 1 - 4PublisherInstitute of Electrical and Electronics Engineers Inc.
SCOPUS
Ultrathin-Mo-Enabled NC-NAND with Sub-3.5nm HZO for Scalable High-MW OperationGo to Link

Lee, Sangho; Kim, Yongsu; Jung, Yangjin; Chang, Seungyeon; Shin, Seokjoong; Kim, Giuk; Joh, Hongrae; Kim, Woongin; Park, Sanghyun; Seo, Kwangyou, et al.

ArticleIssue Date2026Citation2025 IEEE International Electron Devices Meeting (IEDM), pp 1 - 4PublisherInstitute of Electrical and Electronics Engineers Inc.
SCOPUS
Decoupling and Quantifying Polarization and Trap Charges in MIFIS FeNAND: Insights into Charge Dynamics and ReliabilityGo to Link

Joh, Hongrae; Kang, Hyunjun; Kwak, Junhyeok; Kim, Giuk; Choi, Hyojun; Kim, Hoon; Park, Sanghyun; Seo, Kwangyou; Kim, Kwangsoo; Kim, Wanki, et al.

ArticleIssue Date2026Citation2025 IEEE International Electron Devices Meeting (IEDM), pp 1 - 4PublisherIEEE
SCOPUS
First demonstration of federated learning with homomorphic encryption using vertically-stacked ferroelectric tunnel junctionGo to Link

Kim, Jeong-Han; Im, Jiseong; Song, Minsuk; Yoo, Yelin; Lee, Jongwoo; Koo, Ryun-Han; Kim, Jangsaeng; Kwon, Daewoong

ArticleIssue Date2026Citation2025 IEEE International Electron Devices Meeting (IEDM), pp 1 - 4PublisherIEEE
SCOPUS
Sub-1 ms Bio-Inspired Time-to-First Spike (TTFS) Neuromorphic Tactile System Using L-AFeFET and Threshold Switch DevicesGo to Link

Jung, Taeseung; Choi, Hyunsik; Park, Seonjae; Kim, Seungyeob; Ahn, Jinho; Woo, Jiyong; Jeon, Sanghun

ArticleIssue Date2026Citation2025 IEEE International Electron Devices Meeting (IEDM), pp 1 - 4PublisherIEEE
SCOPUS
Ising Solver using Weight Profile of Memristor Crossbar Array for Combinatorial OptimizationGo to Link

Kim, Kyuree; Youn, Sangwook; Park, Jinwoo; Kim, Hyungjin

ArticleIssue Date2025CitationTechnical Digest - International Electron Devices Meeting, pp 1 - 4
SCOPUS
Design Methodology for Low-Voltage Operational (≤1 V) FRAM Cell Capacitors and Approaches for Overcoming Disturb Issues in 1T-nC Arrays: Experimental & ModelingGo to Link

Lee, Sangho; Kim, Giuk; Kim, Chaeheon; Jung, Yangjin; Hwang, Jeonghyun; Nam, Yunseok; Shin, Mincheol; Goh, Youngin; Ryu, Mintae; Suh, Jihye, et al.

ArticleIssue Date2025CitationTechnical Digest - International Electron Devices Meeting, pp 1 - 4
SCOPUS
Vertically Stackable Memcapacitor Crossbar Array based on NAND Flash Array StructureGo to Link

Yu, Junsu; Hwang, Hwiho; Kim, Hyungjin; Choi, Woo Young

ArticleIssue Date2025CitationTechnical Digest - International Electron Devices Meeting, pp 1 - 4
SCOPUS
Oxide Channel Ferroelectric NAND Device with Source-tied Covering Metal Structure: Wide Memory Window (14.3 V), Reliable Retention (> 10 years) and Disturbance Immunity (ΔVth ≤ 0.1 V) for QLC OperationGo to Link

Joh, Hongrae; Kim, Giuk; Ock, Jihye; Kim, Seungyeob; Lee, Sangmok; Lee, Sangho; Kim, Kwangsoo; Lim, Suhwan; Woo, Jongho; Kim, Wanki, et al.

ArticleIssue Date2025CitationTechnical Digest - International Electron Devices Meeting, pp 1 - 4
SCOPUS
Unveiling the Origin of Disturbance in FeFET and the Potential of Multifunctional TiO2 as a Breakthrough for Disturb-free 3D NAND Cell: Experimental and ModelingGo to Link

Kim, Giuk; Kang, Hyunjun; Lee, Sangho; Choi, Hyojun; Jung, Yangjin; Shin, Mincheol; Kim, Kwangsoo; Lim, Suhwan; Woo, Jongho; Kim, Wanki, et al.

ArticleIssue Date2025CitationTechnical Digest - International Electron Devices Meeting, pp 1 - 4
SCOPUS
Challenging issues for terra-bit-level perpendicular STT-MRAM

Park, JG; Shim, TH; Chae, KS; Lee, DY; Takemura, Y; Lee, SE; Jeon, MS; Baek, JU; Park, SO; Hong, Jin Pyo

ArticleIssue Date2015CitationTechnical Digest - International Electron Devices Meeting, v.2015-February, no.February, pp 19.2.1 - 19.2.4
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